栅极

IGBT栅极驱动电路的特性分析和应用

Analysis and Application about the Characteristics of IGBT Grid Driving Circuit

它是以金属钯作为栅极，由PdSio＿2Si构成的钯栅场效应管。

It has grid of metal Palladium and palladium field effect tube composed of Pd-Sio_2-Si .

高k栅极电介质材料与Si纳米晶体管（续）

High k Gate Dielectric Materials and Si Nanotransistor ( Continued )

一触即发的形势、极易引起争端的问题利用低端栅极驱动器IC进行系统开发

An explosive situation , issue Designing with Low-Side Gate Driver ICs

栅极金属是Al，与酞菁铜界面形成肖特基势垒。

The gate metal is Al , which has Schottky barrier interface with copper phthalocyanine .

这一电压在栅极氧化物层上产生一个电场，它导致毗邻的P型衬底转变成N型。

This voltage creates a field across the gate oxide , which causes the adjacent P substrate to invert to N-type .

内表面栅极等离子体源离子注入TiN薄膜及其特性研究

TiN coating for inner surface modification by grid enhanced plasma source ion implantation

SIT的栅极长度为013μm，源极和漏极之间距离为05μm。

The gate length of SIT is 0.13 micron and the distance between source and drain is 0.5 micron .

利用低端栅极驱动器IC进行系统开发平栅极结构碳纳米管场发射性能实验

Designing with Low-Side Gate Driver ICs Experiment Research on Carbon Nanotube Field Emission Performance with Flat Grid Structure

0.18μMCMOS工艺栅极氧化膜可靠性的衬底和工艺依存性

Substrate and process dependence of gate oxide reliability of 0.18 μ m dual gate CMOS process

IGBT的栅极驱动技术是其应用的一个重要方面。

Technique of gate driving is an important aspect in IGBT usage .

认为由靶返回的电子束轰击栅极G2产生反射电子束，再轰击靶面形成伪信号。

It is considered that it formed the pseudo-signal that electron beam coming from target bombard grid G_2 , which produced reflecting electron beam .

利用附加电感实现高频功率MOSFET谐振栅极驱动

Implement of Resonant Gate Drive for High Frequency Power MOSFET with Additional Inductor

一种实用的MOS栅极器件的驱动技术

A Practical Way to Drive the MOS-gated Devices

一种用于功率MOSFET的谐振栅极驱动电路

A resonant gate drive circuit for power MOSFET

提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型.介绍了国内外对高K栅极介质的研究现状。

The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed .

在高压MOSFET的结构中，利用栅极向漏极延伸而构成场板。

Field plate is formed by poly-silicon extending to the Drain in high voltage MOSFET .

在钝化层和沟道之间引入的p型隔离层抑制了表面陷阱的影响，并改善了栅极边缘的电场分布。

A p-type spacer layer , inserted between the oxide and the channel , is shown to suppress surface trap effect and improve the distribution of electric field at the gate edge .

栅极电极则装配在阴极材料下方另一块基板上，在玻璃孔对面与之相对的则为覆盖有ITO电极和荧光粉层的阳极基板。

The gate electrodes are fabricated on another substrate which is mounted below the cathode substrate .

随着栅极氧化层越来越薄，CD线宽越来越窄，离子注入工艺中的金属污染成为离子注入工艺中最重要和急需解决的污染问题。

Thinner the gate oxide is , narrower the CD is , more important and urgent the metal contamination in ion implantation process is .

采用半桥式逆变电路，使用绝缘栅极晶体管IGBT作主开关器件，研制成功30kHz的高频激光电源。

With half-bridge inverting circuit and IGBT , develop a high frequency laser supplier of 300 kHz .

IGBT栅极驱动技术探讨

Technique of IGBT gate driving

TFT-LCD栅极驱动电荷泵的研究与设计

Research and Design of Charge Pump for TFT-LCD Gate Drive

MOSFET栅极驱动的优化设计

Gate Drive Optimization for MOSFET

以及一电压提升装置，用以控制该第一MOS晶体管及该第二MOS晶体管的栅极；

The voltage lifting device controls grid electrodes of the first MOS transistor and the second MOS transistor .

介绍利用大功率绝缘栅极晶体管（IGBT）配合脉冲升压变压器组成的高精度高压脉冲电源。

A high precise and high voltage pulse generator made up of high-power IGBT and pulse transformer is proposed .

电力VITM一代的栅极电荷，高电压N沟道增强型功率MOSFET。

Power VITM generation gate charge , high voltage N-Channel enhancement mode power MOSFETs .

通过准确的建模，可以为栅极驱动电路预测功率MOSFET的输入等效电容。

By accurately modeling , the equivalent input capacitance of power MOSFET can be forecasted for gate driving circuit .

传统多晶硅栅已不能适应CMOS器件尺寸进一步减小的要求，因此需要金属栅极材料来取代多晶硅。

Due to the downscaling of device dimensions in CMOS technology , the metal gate electrodes will be required to replace conventional poly-silicon gate .

该模型以电容为主体，对二极结构和前栅极结构分别选择二极管和N沟道MOSFET来表现碳管发射的非线性过程。

In this model , capacitance is considered as the core component , diode and N-MOSFET are added to present the non-linear emission characteristic during performance .