二次击穿

对ESD应力下扩散电阻的四个区域：线性区、饱和区、雪崩倍增和负微分电阻区、二次击穿区的模型进行了分析。

Diffused resistor model under ESD stress in linear , saturation , multiplication and snapback , and secondary breakdown regions was analyzed .

在PDP驱动电路中的高压功率器件大量采用了VDMOS器件，由二次击穿引起的器件损坏不容忽视。

VDMOS is widely adopted in PDP driver , the damage resulted by secondary breakdown effect can ` t be ignored .

硅二极管I-V特性及二次击穿计算

Calculations of I-V characteristics and second breakdown of silicon diode

同时用器件仿真软件MEDICI模拟了各参数对功率晶体管VDNMOS二次击穿的影响，给出了仿真结果。

The effect of some parameters on secondary breakdown is simulated by using the MEDICI soft .

本文对功率晶体管（GTR）正偏二次击穿测试仪的研制进行了说明，并给出了主要技术参数。

The development of the test instrument for forward-biased second breakdown for characteristics of power transistors ( GIR ) is described and main parameters are given .

采用一种利用TCAD仿真提取MOS器件在静电放电现象瞬间大电流情况下的电学参数，对MOS器件二次击穿行为进行电路级宏模块建模。

A method to exact the electrical parameters and model the second breakdown action of MOSFET 's under ESD ( Electro-Static Discharge ) on circuit-level , using TCAD simulation , is presented .

功率器件作为集成电路的一个发展方向，其应用的范围不断扩大，VDMOS晶体管作为功率器件中重要的一种，具有高输入阻抗、速度快、没有二次击穿等优点。

Power devices as a development of integrated circuits , application of increasing scope , VDMOS transistor as an important kind of power devices with high input impedance , fast , no secondary breakdown and so on .

基于仿真结果首次讨论了GGNMOS的栅长对其一次击穿电压、二次击穿电压和电流、导通电阻、耗散功率等的作用。

Further analysis is conducted on the dependence of breakdown voltage , second breakdown voltage / current , turn-on resistance and dissipated power on gate length , based on MEDICI simulation .

晶体三极管正偏二次击穿特性曲线的安全显示

The Safe Display of Secondary Breakdown Characteristic Curve in Forward-biased Transistors

概述了双极功率晶体管二次击穿机理。

Second breakdown mechanisms of bipolar power transistor is summarized .

用测量正偏二次击穿参数筛选大功率器件

Selecting Great Power Apparatus by Measuring Front / biased Secondary punctuating parameters

功率晶体管二次击穿无损测试研究

Nondestructive Test Study for Second Breakdown of Power transistor

功率器件的二次击穿无损坏测试技术

Nondestructive Test Technique for Second Breakdown of Power Devices

器件的主要失效模式是二次击穿。

The main device failure mode is secondary breakdown .

巨型功率晶体管二次击穿检测

Evaluation of Second Breakdown of Giant Power Transistor

用正偏二次击穿测量法验证大功率器件的可靠性

Test of Reliability of High Power Devices by Measuring Their Parameters of Second Breakdown With Forward Bias

讨论了降低电流型二次击穿的方法和防止电流型二次击穿的电路改进措施。

Methods of reducing the stress leading to current mode second breakdown , and improving measures of preventing the current mode second breakdown are discussed .

基于这种仿真方式，还给出仿真中判断二次击穿的两种方式，通过仿真结果和测试结果的对比，验证了这两种判定方式的正确性。

Two methods are also provided to determine when the second breakdown happens , and they are proved by the comparison of simulation results and TLP test results .

固体雪崩管被触发工作在雪崩或二次击穿瞬间时能输出很大的脉冲峰值电流，且触发晃动和上升时间都很小，因此广泛用于制作重复频率低而脉冲功率高的快脉冲源。

The solid avalanche transistor which is triggered to the state of avalanche or the moment of second break down can output high pulse peak current with little jitter and short rise time .

通过地面模拟实验研究，确定了二次放电阈值电压并监测了二次放电脉冲电流，对高压太阳阵二次放电特性及其击穿机理进行了讨论。

This paper studies the characteristics of the secondary discharge and the breakdown mechanism through identifying the voltage threshold where the secondary discharge will probably occur and monitoring the pulse current of the secondary discharge .