深度分布

F离子弹性反冲法分析固体中H的深度分布

Determination of hydrogen depth profile in solids by detection of recoiled proton with MeV F ions

PIXE应用于分析Si基片热扩Ni的深度分布

PIXE analysis of depth profile of Ni thermally diffusing in Si substrate

利用（d，pγ）核反应p-γ符合技术进行深度分布分析初探

Depth profiling analysis by ( d , p γ ) coincidence technique : a preliminary result

连续过渡型多晶物相深度分布的X射线衍射测试方法

X-ray diffraction phase depth profiling for polycrystal with continuous phase depth distribution

红河断裂带测区古构造残余应力随深度分布X射线测量

X ray measurements of PALEOTECTONIC RESIDUAL STRESS with depth along the Red River Fault Zone

本文描述了利用~（14）N（d，a1）~（12）C核反应测量固体样品表面层内氮原子含量及深度分布的方法。

The nitrogen depth profile and concentration are measured by means of 14N ( d , a1 ) 12C reaction .

无定形中靶位移原子深度分布的MonteCarlo模拟计算

Monte Carlo simulation of depth distribution of displaced atoms in amorphous targets

提出了以X射线衍射测量连续过渡型多晶物相深度分布的方案。

A new X-ray powder diffraction method is reported to test phase depth distribution quantitatively and non-destructively .

三维残余应力及深度分布的X射线分析和计算

Method to Analyze and Evaluate the Depth Profile of the Three Dimensional Residual Stresses State with X-ray

Al－Sn合金表面元素深度分布的局域性

Localization of the component atom depth - profiles in Al-Sn Alloy Surface Layer

建立了有限环Z4上的码的深度分布理论。

Theory of depth distribution of codes over a finite ring Z4 is established .

同步辐射X射线反射技术及其在测量δ掺杂晶体中原子表层深度分布的应用

Synchrotron radiation X-ray reflection technique and its application in measurement of atomic depth distribution in δ - doped Si crystals

X射线低角反射实验技术是测定固体材料表层中杂质原子深度分布的有效手段。

X-Ray Low-angle reflection is an effective method for detecting the atomic depth distribution of impurity near the crystal surface .

东太平洋多金属结核U、Th同位素深度分布特征与生长速率

Depth Distribution Features of U 、 Th Isotopes and Growth Rates of Polymetallic Nodules in Eastern Pacific

AES深度分布测量的精确分析和电子逃逸深度的测定

Accurate Analysis of AES Depth Profiles and Determination of Electron Escape Depth

有关湖泊沉积~（137）Cs深度分布资料解译的探讨

Discussion on Interpretations of ~ ( 137 ) Cs Depth Distribution Profiles of Lake Deposits

厦门湾海水中~（224）Ra的深度分布特征及其应用

Profiles of ~ ( 224 ) Ra in the Xiamen Bay waters and its application

而除SIMS外，其它分析技术如AES、XPS等不能测量如此大动态范围的元素深度分布。

Than SIMS can not measure depth distribution of this broad dynamic range of elements .

利用现有的物性资料以及沉积层的厚度分布，线性插值得到各网格点的密度、波速以及Q值的深度分布，在此基础上建立二维横向非均匀结构模型。

Grid with the distribution of density , velocity and value which are provided by linear interpolation along the depth of the Quaternary sedimentary layer .

对氧化物进行了AES分析，得到了元素的深度分布。

AES analyses of the oxide film and Auger chemical depth profile of the oxide film have been performed .

PIXE、SEM与切片技术相结合研究低能离子注入种子的浓度-深度分布

Measurement of low energy ion implantation profiling in seeds by the PIXE and SEM with slicing up technique

北京及邻近地区Moho面的深度分布及其构造意义

Depth Distribution of Moho Discontinuity beneath the Beijing and Its Adjacent Area

比较了Al、Fe、Cu、Ph4种衬底金属板，对受辐照材料吸收剂量深度分布的影响；

The effects of four different metal base-plate such as Al Fe Cu and Ph for dose depth distribution in materials were compared .

讨论了AES分析的深度分布特征与电池效率之间存在着某种函数关系。

A certain functional relation was found between the depth profile of elements analyzed by AES and efficiency of the cell .

用针盘摩擦磨损实验机测定了注入样品的耐磨性能，用俄歇电子能谱仪（AES）测量注入样品成分深度分布，并检测了样品硬度。

The frictional properties of the implanted samples were assessed using a pin-on-disk tester and the elemental depth profiles were measured .

比较了采用X+和CsX+信号检测的Ge，Pd，Ga和As的深度分布。

Comparison is made between the signals of X + and CsX + for monitoring the depth profiles of Ge , Pd , Ga and As .

利用AES和离子溅射剥离技术，对SiO2/GaAs界面进行了深度分布测量。

The SiO_2 / GaAs interface was measured for its depth profile by use of AES combined with ion-sputtering and stripping technique .

用扫描电子显微镜（SEM）和俄歇电子能谱（AES）两种表面分析技术对Co离子注入修饰微电极的表面状况、表面元素组成及深度分布进行测定。

The composition and depth distribution of elements on the surfaces of Co ion implantation modified carbon fiber microelectrode were determined by scanning electron microscope and Auger electron spectroscopy .

利用~4He-O共振散射测量SiOxNy功能梯度薄膜中氧的深度分布

Depth Profile of Oxygen in SiO_xN_y Functional Gradient Thin Film Using 4 He O Resonance Scattering

由脉冲MOS结构的I-C瞬态曲线确定产生寿命的深度分布

Determination of the Generation Lifetime Profile from I-C Transient Curve of Pulsed MOS Structure