反应离子刻蚀

反应离子刻蚀过程中如射频功率等参数对刻蚀速率和沟槽表面形状会产生一定的影响。

There are also some factors such as radio frequency ( RF ) power and other parameters will impact on etching rate and the surface shape of groove in the RIE process .

采用经过参数优化的DRIE刻蚀深硅槽，并用反应离子刻蚀（RIE）对深槽开口形状进行修正，制造了具有理想侧壁形状的深槽，利于介质的完全填充，避免产生空洞。

By optimizing DRIE parameters and RIE etching the trenches ' opening , the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids .

用于MEMS器件制造的深反应离子刻蚀设备

Deep Reactive Ion Etching ( DRIE ) Device in the MEMS Fabrications

用反应离子刻蚀技术制作Ge菲涅尔微透镜列阵

Make of ge fresnel microlens arrays using reaction ion etching technology

一种用于VLSI工艺模拟的反应离子刻蚀速率模型

A Reactive Ion Etching Rate Model for VLSI Process Simulation

反应离子刻蚀PMMA的各向异性刻蚀研究

Study on Anisotropic Etching in Reactive Ion Etching of PMMA

铁电PbZr（0.53）Ti（0.47）O3薄膜的磁增强反应离子刻蚀

Magnetically Enhanced Reactive Ion Etching of Ferroelectric PbZr_ ( 0.53 ) Ti_ ( 0.47 ) O_3 Thin Film

Sol-Gel法制备的铁电薄膜和Pt/Ti下电极的反应离子刻蚀技术

Reactive Ion Etching of Sol Gel Derived PZT Ferroelectric Thin Films and Pt / Ti Bottom

用SF6-N2混合气的反应离子刻蚀制作WSix微米结构

Fabrication of WSi_x Micron Structures Using RIE in SF_6-N_2 Mixture

SiO2平面光波导工艺中的反应离子刻蚀研究

Reactive Ion Etching of SiO_2 in Planar Lightwave Circuit Fabrication

Bi2Ti2O7薄膜的反应离子刻蚀及原子力显微镜研究

The Reactive Ion Etching of Bi_2Ti_2O_7 Thin Films on Silicon Substrates and Its Image in Atomic Force Microscopy

SF6/O2/CHF3混合气体对硅材料的反应离子刻蚀研究

Study on Reactive Ion Etching of Silicon in SF_6 / O_2 / CHF_3 Mixtures

BST薄膜的磁增强反应离子刻蚀研究

Study on Magnetically Enhanced Reactive Ion Etching of BST Thin Films

超高速ECL工艺中铝和硅-铝的反应离子刻蚀

RIE of Al and Al-Si in Very High Speed ECL Technology

由于Mo／Si多层膜的总厚度太大，无法使用离子束刻蚀完成，因而选用反应离子刻蚀的方法。

The Mo / Si lamellar grating are too thick to be fabricated with ion beam etching , so we chose reactive ion etching .

深反应离子刻蚀（DRIE）设备，主要应用于MEMS器件制造中Si材料的深槽刻蚀[1]。

The deep reactive ion etching device is mainly applied to etching Si materials in the MEMS fabrications area .

采用电感耦合反应离子刻蚀制备SOI脊形光波导器件，并给出了工艺流程。

The optical rib waveguides are designed and fabricated with SIMOX SOI wafers , using inductive coupled plasma reactive ion etching ( ICPRIE ) process .

报道了用CF4和氩气Ar作为工作气体的ECR反应离子刻蚀多晶硅（PolySi）技术。

In this paper the etching ( RIE ) of poly-Si of the electron cyclotron resonance ( ECR ) reactive ion using CF 4 and Ar was reported .

在高密度反应离子刻蚀技术中，存在明显的线宽损失，对小尺寸MEMS结构影响很大，将使MEMS器件灵敏度下降，稳定性降低。

There is obvious critical dimension ( CD ) loss in the high density RIE technology , which decreases the sensibility and stability of MEMS devices , especially for the small dimension MEMS structures .

加速度计用普通的N型硅片制造，为了刻蚀高深宽比的结构，使用了深反应离子刻蚀（DRIE）工艺。

This accelerometer is fabricated by N type silicon wafer . To obtain high aspect ratio structure , deep reactive ion etching ( DRIE ) process is employed .

软X射线聚焦波带片的研制包括光路设计、膜系设计、衬底选择、薄膜制备、亚微米光刻、X射线光刻、反应离子刻蚀、离子束刻蚀、电镀和化学腐蚀等多种微细加工技术。

The development of soft X-ray CZP included design of optical path , selection of material , preparation of thin film , sub-micron lithography , X-ray lithography , reactive ion etching , ion beam etching , electroplating and chemical etching .

采用先进的LPE及反应离子刻蚀等微细加工技术制作了盘型－图钉式微腔结构，测得其有源区的光荧光谱的半宽度为0.032eV，波长为815.33nm。

The measured half width of photoluminescence spectrum in the active area is 0.032 eV with the wavelength of 815.33 nm .

分析了用反应离子刻蚀（RIE）系统刻蚀多层难熔金属的可行性。

Refractory metals multilayer , grown on silica coated Si wafer , was etched by reactive ion etching ( RIE ) .

提出了一种使用双层掩膜刻蚀SiC的方法，对磁增强反应离子刻蚀（MERIE）SiC的工艺进行了详细研究，得到了刻蚀的优化参数，为SiC热辐射器件的制作打下基础。

A bi-layer mask process is proposed and the technique of magnetic enhanced reactive ion etching ( MERIE ) of SiC was studied to determine the optimal processing parameters .

介绍在等离子工艺中的等离子充电损伤，并且利用相应的反应离子刻蚀（RIE）Al的工艺试验来研究在nMOSFET器件中的性能退化。

Plasma charging damage in plasma processes is introduced in this paper and corresponding process experiment in RIE Al was conducted to investigate performance degradation of nMOSFET devices .

利用反应离子刻蚀（RIE）技术刻蚀激光器腔面，获得集成式沟槽耦合腔AlGaAs/GaAs激光器，在室温下实现CW稳定单模运转。

Monolithic groove-coupled-cavity AlGaAs / GaAs lasers were fabricated by using the technique of reactive ion etched of laser facets . CW stable single mode operation room temperature were observed .

采用反应离子刻蚀技术，设计、制备了一种角反射器耦合的10单元InGaAs应变层单量子阱镇相列阵激光器。

A ten-element InGaAs strained-layer single quantum well laser phased array coupled with corner reflectors ( CRLA ) was designed and fabricated by using reactive ion etching ( RIE ) .

提出了一种利用深反应离子刻蚀（DRIE）和电介质填充方法来制造具有高深宽比的深电学隔离槽的新型技术。

A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented .

叙述了用光学反射法在线监测LSI等离子及反应离子刻蚀过程和终点的监测原理与具体实施。

This paper describes the principle of end point monitoring of the plasma etch and the reactive ion etch for LSI by the optical reflection , and implementation of the optical reflection .

由于反应离子刻蚀（RIE，ReactiveIonEtching）具有较快的刻蚀速率，并且是具有高选择比的各向异性刻蚀，所以反应离子刻蚀在MEMS加工中得到了广泛地应用，是重要的MEMS加工工艺之一。

Since the etching rate of RIE ( Reactive Ion Etching ) process is large and RIE is a high selectivity anisotropic etching , RIE is widely used in the manufacturing of MEMS and it is one of the most important MEMS processes .