化学机械抛光

实验结果表明：该抛光液适用于Cu化学机械抛光过程第一阶段的抛光，并达到了高抛光速率及铜/钽/介质层间的高选择性的效果。

The experimental result shows that the slurry is suitable for the first polishing of Cu CMP process with faster removal rate of Cu and high selectivity between Cu / Ta / SiO 2 .

在化学机械抛光中，晶圆边缘出现过磨（Over-grinding）现象，降低了晶圆表面的抛光质量和晶圆利用率，晶圆直径越大，晶圆边缘的过磨现象越严重。

During CMP processes , over-grinding appears in the edge of wafer , which results in the decrease of planarization quality and the utilization of wafer . With the increase of the diameter of the wafer , over-grinding becomes more severity .

纳米CeO2磨料在硅晶片化学机械抛光中的化学作用机制

Chemical Effect Mechanism in Chemical Mechanical Polishing Silicon Wafer Using Nano-sized CeO_2 Abrasives

钛锆掺杂CeO2磨料的制备及其化学机械抛光性能

Preparation of Ti or Zr-doped Ceria Abrasives and Their Chemical Mechanical Polishing Performance

基于AFM的化学机械抛光磨粒模拟研究

Simulation for an Abrasive Particle of the Chemical Mechanical Polishing with AFM

采用有机碱和过氧化氢作为抛光液的pH值调节剂和氧化剂，分析化学机械抛光过程中化学作用对抛光过程的影响。

Organic alkali and hydrogen peroxide were used as pH regulator and oxidant to analyze the effect of chemical action on CMP process .

用于超精密硅晶片表面的化学机械抛光（CMP）技术研究

Research Progress of CMP Technology in Ultra-precision Surface of Single-crystal Silicon

SiO2化学机械抛光浆料的制备与性能研究

Preparation of SiO 2 CMP Slurry and Its Properties

化学机械抛光用SiO2研磨料的制备及其后处理

Preparation and Disposal of SiO_2 Slurry Used in CMP

利用三维格子Boltzmann法研究化学机械抛光中压力分布

Hydrodynamic Pressure Distribution Simulation for Chemical Mechanical Polishing by Three-dimensional Lattice Boltzmann Method

半导体工业中的化学机械抛光（CMP）技术

Chemical - Mechanical Polishing Technique in the Semiconductor Industry

化学机械抛光（ChemicalMechanicalPolishing，cMP）是现今加工硬脆材料最实用的方法，在微电子和光电了产业应用极其广泛。

Chemical mechanical polishing ( CMP ) is now the most practical method of brittle materials , and widely used in microelectronics and optoelectronics .

CdSe探测器晶片化学机械抛光工艺研究

Study on Chemical Mechanical Polishing Technology for CdSe Wafer for Detectors

介绍了半导体工业中蓬勃发展的化学机械抛光（CMP）技术。

The Chemical mechanical polishing technique in the field of semiconductor industry was introduced .

化学机械抛光（CMP）已经被广泛的应用于大规模集成电路的制造中。

Chemical Mechanical Polishing ( CMP ) has been widely used in VLSI manufacturing .

ULSI化学机械抛光（CMP）材料去除机制模型

Material Removal Mechanism and Model on Chemical Mechanical Polishing in ULSI

格子Boltzmann法和离散元法耦合算法及其在化学机械抛光中的应用

Coupled Lattice Boltzmann Method and Discrete Element Method and Its Application in Chemical Mechanical Polishing

化学机械抛光（CMP）技术的发展、应用及存在问题

Advances and Problems on Chemical Mechanical Polishing

马尔文纳米激光粒度分析仪在测定高浓度化学机械抛光（CMP）浆料粒度分布中的应用

Determining the Particle Size Distribution of Chemical-mechanical Polishing Slurries by Malvern HPPS Particle Size Analyzer

ULSI制备中SiO2介质的化学机械抛光

Chemical Mechanical Polishing of Silica Dielectric in ULSI Manufacturing

氧化铈纳米颗粒的合成及其化学机械抛光性能钛锆掺杂CeO2磨料的制备及其化学机械抛光性能

Synthesis of CeO_2 Nanoparticles and its Chemical Mechanical Polishing Performance Preparation of Ti or Zr-doped Ceria Abrasives and Their Chemical Mechanical Polishing Performance

抛光垫是化学机械抛光（CMP）系统的重要组成部分。

Polishing pad is a very important component of the chemical-mechanical polishing ( CMP ) system .

实验同时还研究了经过机械抛光、化学机械抛光、化学腐蚀等不同表面处理后的CdTeRaman散射谱。

The Raman spectra of the mechanically polished , chemico mechanically polished and chemically etched CdTe surfaces are also studied .

化学机械抛光（Chemical-MechanicalPolishing，简称CMP）是影响集成电路性能和成品率的主要因素之一。

CMP ( Chemical-Mechanical Polishing ) is one of the factors that influence chip yield .

ULSI制造中铜化学机械抛光的腐蚀磨损机理分析

Corrosive Wear Analysis of the Copper Chemical-mechanical Polishing in ULSI Manufacturing

用于ULSI铜布线的化学机械抛光分析

Analysis and Study on CMP of Copper Interconnects for ULSI

最新研究表明，纳米CeO2可用于集成电路芯片加工的化学机械抛光（CMP）浆料。

Recent investigation shows that CeO2 nanoparticles can be used as CMP slurry to polish IC chip .

ULSI化学机械抛光的研究与展望

Research and Prospects of Chemical Mechanical Polishing for ULSI

表面加工工艺对气缸套使用寿命的影响化学机械抛光（ChemicalMechanicalPolishing，CMP）是对传统表面加工工艺的革命。

The effect of surfacing process technology on the working life of a cylinder sleeve Chemical mechanical polishing ( CMP ) is an innovative technique to traditional surface manufacture process .

RBR控制在超大规模集成电路制造的化学机械抛光工艺中的应用

RBR control applied on chemical-mechanical polishing process in ULSI manufacturing