隧穿电流

Si3N4栅MOS器件的隧穿电流模拟

Simulation of Direct Tunneling Current in MOSFET with Si_3N_4 Gate

在第4节，用Keldysh格林函数，一个隧穿电流公式被给出。

In the 4th subsection , we give tunneling current formula by using the Keldysh Green function .

纳米级MOS器件中电子直接隧穿电流的研究

A Study on Direct Tunneling Currents in Nano - MOS Transistors

粗糙界面对超薄栅MOS结构的直接隧穿电流的影响

Effect of Interface Roughness on the Direct Tunneling Current in Ultrathin MOS Structures

提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型.介绍了国内外对高K栅极介质的研究现状。

The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed .

数值求解的结果表明：镜像势引起的势垒降低对超薄栅MOS直接隧穿电流有较大的影响。

The barrier lowering induced by image potential is proved to influence the tunneling current largely .

GaNHFET沟道热电子隧穿电流崩塌模型

Hot Electron Tunneling Mechanism of Current Collapse in GaN HFET

对超薄栅氧MOS器件直接隧穿电流中的相关问题进行了讨论，包括多晶硅耗尽效应的影响、量子效应的影响以及隧穿电流组成成分。

Some related issues about the DT including Quantum-Mechanical effect , polysilicon gate depletion effect and tunneling current components are discussed .

该计算模型还可以用于高介电常数栅介质和多层栅介质MOS器件的直接隧穿电流的计算。

This model could also be used to calculate direct tunneling currents of MOST with high-k gate dielectrics or stacked gate dielectrics .

随着器件尺寸的迅速减小，直接隧穿电流将代替FN电流而成为影响器件可靠性的主要因素。

With the rapid scaling down of MOS devices , the direct tunneling current becomes the main factor for MOS device reliability instead of FN tunneling .

采用自洽解方法对超薄栅介质MOS器件各子带的能级、Si表面电荷面密度和隧穿电流进行了计算和仿真，模拟结果与实验结果吻合较好。

Using self-consistent numerical solution , the subband energy , charge density of Si surface and tunneling current of ultra-thin gate dielectric MOS devices is calculated and simulated . The tunneling-current model provides a good fit to experiment data .

该模型具有更大的普适性、更适合工作在高场条件下的SiC材料，并且能够连续的计算热电子发射电流和隧穿电流。（2）SiC肖特基势垒源漏MOSFET的理论模型研究。

The proposed model has the advantages of more universality , more suitability for SiC in high-field application and seamless calculation of thermionic emission and tunneling current . ( 2 ) The study on the theoretical model of SiC SBSD-MOSFET .

结果显示该方法比WKB近似更精确，同时也更适合工作在高场条件下的SiC材料，并且能够连续地计算热电子发射电流和隧穿电流。

The simulation results show that the proposed method has the advantages of greater accuracy and adaptability to SiC Schottky contacts in high fields over the WKB approximation . It also can seamlessly treat thermionic emission and tunneling current .

DIFF反映了VG和VD对GIDL隧穿电流影响的不同，这种差别是因为两种情形下的横向电场不一样，从而使得交叠区的硅中水平方向上空穴的隧穿产生差别。

DIFF implies the different influences of VD and VG on the GIDL tunneling current . It is due to the different hole tunneling in the lateral direction at the overlap region interface under the two conditions .

通过数值求解非平衡态维格纳函数，研究了三量子阱（three-quantum-well）超晶格单元结构共振隧穿电流&电压特性，给出了量子阱结构参数变化对其伏安特性曲线的影响。

Current-Voltage Characteristics in three-quantum-well superlattice units are studied by numerically solving the nonequilibrium Wigner Function Equation . Parameter changes of three-quantum-well obviously affect its Current-Voltage Characteristics . The numerical results provide theoretic attestation for farther experimental research to a certain extent and useful reference informations for design and manufacture .

InGaAs/InP异质结光电二极管中的深能级协助隧穿电流

Deep Level Assisted-Tunneling Current in InGaAs / InP Heterostructure Photodiode

这股电流主要是陷阱辅助隧穿电流。

The band trap band tunneling current is dominant of this current .

多晶硅薄膜晶体管泄漏区带间隧穿电流的建模

Modeling of the Band-to-Band Tunneling Current in Polysilicon TFT 's Leakage Region

散射对量子阱隧穿电流的影响

Effect of Scattering on Electron Tunneling in Quantum Well

建立了一个直接隧穿电流的经验公式。

An empirical expression for the direct tunneling ( DT ) current is obtained .

隧穿电流的大小依赖于带阶的大小。

Tunneling currents depend on the band offsets .

得到了通过主量子点的隧穿电流的解析表达式。

The analytical expression for the tunneling current through the main QD has been obtained .

通过调制准二维电子积累层的面积进而达到控制隧穿电流的目的。

The gate voltage modulates the tunneling current by modulating the area of the quasi-two-dimensional electron accumulation layer .

当外加电压远大于阈值电压时，隧穿电流与电压成正比。

But when the external voltage is larger than V T , the tunneling current is proportional to the voltage .

同时还探求了垂直磁场对共振隧穿电流峰抑制作用的物理机制。

It is also explored that the physical origin about the suppression of resonant-tunneling current by a perpendicular magnetic field .

外界条件可引起超晶格中内建电场的变化，进而引起隧穿电流的变化。

The external condition could induce the change of piezoelectric field in superlattices and further induce the change of tunneling current .

当外加电压小于阈值电压时，隧穿电流为零，显示出库仑阻塞现象；

When the external voltage is less than V T , the tunneling current is zero , which displays the Coulomb blockade .

理论研究了非对称双势垒结构中光学声子发射率和光学声子辅助隧穿电流。

The phonon emission rate and the phonon assisted tunneling ( PAT ) current in an asymmetric double barrier structure are theoretically studied .

运用热电子隧穿电流崩塌模型解释了强场电流崩塌的实验结果；

By using the hot electron tunneling mechanism of current collapse , some experimental results about current collapse under high electric field were explained .

尽管沟道区态密度的复杂变化和硅层的厚度对栅隧穿电流也有影响，但并不显著。

Although the variation of density of states in channel and the thickness of silicon body have some effects , they are not significant .