邻近效应

电子束在MEMS加工中邻近效应的分析与补偿

Analysis and compensation of proximity effect in MEMS with e-beam lithography

具有&U中心的非简单金属与BCS超导体的邻近效应（Ⅱ）

The proximity effect between a nonsimple metal with-u centers and a BCS superconductor (ⅱ)

卫星影像邻近效应PSF校正方法

The PSF correction method for adjacency effect in satellite images

随着超大规模集成电路（VLSI）图形密度的增大，邻近效应已成为光学光刻的关键问题之一。

As the density of VLSI circuit increases , the proximity effect has been one of the critical issues in optical lithography .

本文在分析了趋肤效应和邻近效应的基础上，提出了一个LTCC电感的宽带电路模型。

In this paper , a new circuit model for LTCC inductors is presented incorporating skin effect and proximity effects .

在假定大气干扰已经被排除的条件下，由于像元之间邻近效应的存在，被观测目标像元的反射信号（DN值中）包含了背景地物像元散射的贡献。

Assuming atmosphere disturbance being excluded , because of adjacency effect among pixels , the DN value of a target pixel contain the scatter contributions of background pixels .

Sn-Ag邻近效应桥的性质

Properties of Sn-Ag proximity effect bridges

并采用RMSE对模型精度进行了评估。（3）邻近效应的去除。

And RMSE is being used to evaluate the model accuracy . ( 3 ) Adjacency effect .

AFM图显示，邻近效应已大大降低，可满足三维加工精度的要求。

The AFM micrographs show that the proximity effect is reduced greatly , and that the corrections of both the horizontal and the vertical can satisfy the precision of three-dimensional fabrication .

通过MonteCarlo模拟结果，还发现电子的横向扩散范围随曝光剂量的增加而扩大，这会导致各曝光图形之间相互影响，加剧邻近效应，影响曝光图形线宽精度。

By Monte Carlo simulation results , lateral scattering range of EB expands with exposure dose increasing , which will result in the interaction of exposure patterns , intensify proximity effect and affect line-width resolution of exposure patterns .

据Carder（1995），Christtopher（1998）等的研究结果，当空间分辨率大于250m时，邻近效应的影响作用超过混合像元影响作用。

According to the results of carder ( 1995 ) and Christopher ( 1998 ), the influence of adjacency effect exceeds that of mixed pixels when the spatial resolution is greater than 250 m.

但是对于传统线绕式变压器，当开关频率高于100kHz时，变压器圆铜线的高频效应（主要为集肤效应和邻近效应）越来越显著，增加了变压器的损耗。

However for conventional wire wound transformers this leads to problems of increased loss due to the skin and proximity effects in the round conductors particularly at frequencies above 100 kHz .

IEC-60287和JB/T10181-2000仅给出了单回路情况下的邻近效应计算公式，且有一定的限制条件。

IEC-60287 and JB / T10181-2000 give only a formula to calculate the proximity effect of single loop cable conductor , and there are some limiting prerequisites to use the formula .

分析表明，在强邻近效应情况下磁场耦合不仅产生等效互感而且产生等效互电阻，实验测试表明邻近效应使钢板电阻在1MHz时比无邻近效应时大17倍。

For strong proximity effects , the analyses indicate that magnetic field coupling not only produces a mutual inductance but also an equivalent mutual resistance . The experiment measurements show that the steel resistance is 17 times larger at 1 MHz .

然后，提出了一个简化的2-PI等效电路模型，它综合考虑了趋肤效应、邻近效应、线间寄生电容、容性衬底耦合、感性衬底耦合等等高频寄生效应。

Then a simplified 2-PI model of planar spiral inductor is presented , which include the effects of Skin effect , Proximity effect , line-line parasitic capacitance , capacitive substrate coupling , inductive substrate coupling , and so on .

当集成电路生产工艺发展到纳米级时，利用现有的曝光设备（248nm和193nm），由于所谓的光学邻近效应，集成电路制造厂商已经无法制造出满足电路功能要求的产品。

As the IC manufacturing process develops from sub-micron to very deep submicron ( VDSM ) technologies , with current lithography tools ( 248nm and 193nm ), foundries can not manufacture products that designs want because of so-called Optical Proximity Effect ( OPE ) .

超导邻近效应与电子能态分布研究

A Study on Superconducting Proximity Effect and Electron Energy State Distribution

超深亚微米集成电路制造过程中光学邻近效应模拟的研究

Research on Simulation of Optical Proximity Effect in VDSM IC Manufacture

亮暗衬线法校正邻近效应及其实验研究

Bright and dark figure method for OPC and its experimental research

有多种方法对邻近效应进行修正如剂量调整、图形调整等。

We use three methods to correct proximity effect in JBX ?

相移掩模和光学邻近效应校正光刻技术

Optical Microlithography with Phase Shifting Mask and Optical Proximity Effect Correction

邻近效应对钢板阻抗的影响及其等效电路模型

Mechanism and model of steel plane impedance influenced by proximity

电子束曝光的邻近效应校正及显影模拟

Proximity effect correction and de-velopment simulation for electron beam lithography

邻近效应耦合的二维超导阵列的电阻转变

Resistive transition in two-dimensional arrays of proximity-coupled superconducting weak links

校正激光直写邻近效应的快速方法

A Fast Method for Correcting Optical Proximity Effect in Laser Direct Writing

非线性曲线拟合法确定邻近效应参数

Determination of Proximity Effect Parameters Based on Nonlinear Curve Fitting

集肤和邻近效应对平面磁性元件绕组损耗影响的分析

Analysis of Skin and Proximity Effects on Winding Losses in Planar Magnetic Components

电子束光刻中的内部邻近效应校正技术研究

Study of Internal Proximity Effect Correction in Electron-Beam Lithograph

这种模式也有双重挡风板，以减少邻近效应。

This model also has a dual wind shield to reduce proximity effect .

电子束光刻中邻近效应校正的几种方法

Methods of proximity effect correction in electron beam lithography