结电容

多晶CdS太阳电池p-n结电容的测量及应用

Measurements of p-n junction capacitance in polycrystalline CDs solar cell and its application

第三种方法是测量二极管在各负偏压点下的输入阻抗与低频结电容C（V）来求得二极管的结参数；

In the third method the parameters of a varactor diode are determined by the measurements of the input impedance only at negative biases and the junction capacitance at low frequency ;

PN结电容微分量频谱

Frequency Spectrum of Capacitance Derivative in PN Junction

利用半导体测试仪对芯片进行了测试，包括探测器的暗电流、响应度和结电容，并分析了深n阱、浅沟槽隔离等工艺步骤对探测器参数的影响。

Some critical parameters of these new structure photodetectors , such as dark current , responsivity , and junction capacitance , are measured and analyzed .

结果表明，γ辐照使光敏器件的光电流Ip、电流放大倍数β和光电响应时间t减小，暗电流Id增加，结电容C基本不变。

The experimental results showed that the light current Ip , current amplification factor β and response time to photo - devices were all decreased while dark current Id increased and junction capacitance C unchanged basically .

在反向偏压下，测试时所用的高频小信号频率超过一定值后，GM型探测器结电容测试值将下降。本文讨论了频率对CV特性影响的实验结果，并分析了其原因。

Under reverse bias if frequency of small AC signal exceeds some value , the junction capacitance of Au-Si surface barrier detector will decrease .

建立了一个单电子加法器的物理模型，采用MonteCarlo法对其进行数值模拟，分析了温度、栅极电容及隧道结电容等参数对单电子加法器的电学特性的影响。

A physical model of single-electron adder was offered and its behavior was simulated by Monte Carlo method . The influence of temperate , gate capacitance and tunnel capacitance on the electric performance were investigated .

同时，单电子三极管I-V曲线的振幅随着隧道结电容的增大而减小，但I-V曲线的周期保持不变。

If the tunnel junction capacitance becomes larger , the amplitude of the I-V curve of single-electron transistor becomes smaller , but the period is unchanged .

由于FFJ的发射极-基极结电容仅仅取决于它的发射极掺杂情况，因此，可以同时得到较小的基极电阻rb和较高的发射极截止频率f（TE）。

The emitter-base junction capacitance of the FFJ is only decided by it 's emitter doping profiles , so that both smaller base resistance rb and higher emitter cutoff frequency can simultaneously be obtained .

绝缘体上硅器件（SOI）具有结电容小、抗辐射性能好、优良的亚阈区特性、消除了闩锁效应、适于低压低功耗工作等优点，而被称为二十一世纪的硅集成电路技术。

Silicon-on-insulator ( SOI ) device has the advantages of small junction capacitance , good resisting-radiation property , superior subthreshold characteristics , eliminating the latchup effects , suitable to low-voltage low-power operation , etc.

移相控制零电压开关PWM全桥变换器利用变压器的漏感和开关管的结电容可以实现开关管的零电压开关，在中大功率的场合应用广泛。

Phase-shifted Zero-Voltage-Switching PWM full bridge converter can realize ZVS for the power switches with the use of the leakage inductance of the transformer and the intrinsic capacitors of the power switches , so it is used widely for medium and high power applications .

选择TVS芯片对SCB火工品进行电磁防护时，在满足击穿电压高于发火电压的情况下，应尽量选择结电容较大、寄生电阻较小的芯片。

The TVS chips whose breakdown voltage is higher than the ignition voltage , which has larger junction capacitance and smaller parasitic resistance , should be selected to protect SCB device from electromagnetic .

文中列出了碲镉汞光电二极管结电容的测量结果。

The measurement results for Hg Cd Te photodiodes are presented .

一种新的超突变结电容电压方程

A New Equation for Capacitance-Voltage Characteristic of the Hyperabrupt Varactors

双钙钛矿氧化物锶铁钼氧薄膜异质结电容性质的研究

Study on the Capacitance Characteristics of Double Perovskite Oxides Sr_2FeMoO_6 Film Heterojunction

此外还观察到，在较低的测试频率和较大的正向电压下，激光二极管的结电容具有负值。

A negative capacitance effect in LDs is also observed under larger voltages or lower frequencies .

发现结电容随频率的降低而明显增大，并伴有反常的尖峰出现。

We found the junction capacitance increased significantly as the frequency decreased and the anomalous peak arose .

结电容和自发复合对注入式激光器脉冲调制延迟的影响

Effect of Junction Capacitance and Spontaneous Recombination on Time Delay of Turn-on of Injection Lasers Modulated by pulse Currents

分析表明，半导体中的深能级杂质在低频下对结电容有显著影响。

The analysis shows that the deep level impurities in the semiconductors have the obvious influence on the junction capacitance at low frequencies .

晶体管集电结电容对放大电路的影响

How to Identify the Biased Collector Junction with the Transistor Saturated EFFECTS OF THE BASE-TO-COLLECTOR JUNCTION CAPACITANCE OF A TRANSISTOR ON AMPLIFYING CIRCUITS

高频与低频的区别和界限也有叙述，主要是要不要考虑结电容的问题。

The limits which is used to distinct High-frequency or low frequency is described too . in the main are not to want to consider the problem of junction capacitance .

此模型描述了注入光功率与光生电流的关系，以及反偏电压对光生电流与结电容的影响。

The model describes the relationship between photocurrent and incident optical power , and it also illustrates the impact of the reverse bias to the variation of the junction capacitance .

在中子辐照环境下，变容二极管C&V特性发生变化，在给定偏置下，结电容随中子注量的增加而下降。

In the neutron radiation environment there occurs the change in C-V characteristics of the Tar-actor diodes . At the given bias the junction capacitance decreases with increase of neutron fluence .

就遥测发射系统而言，传统的模拟调制已经很成熟，模拟发射机是利用调制信号的变化来控制变容二极管的结电容容值的变化，从而改变压控振荡器的震荡频率来实现调频；

Telemetry consists of transmitter , antenna and receiver . Traditional analog modulated transmitter is mature which modulates the frequency of VCO by making use of the changeability of diode 's capacitance .

本文从结电容放电的观点探讨注入电流脉冲结束后p&n结不稳态的异常衰减过程。

An investigation of the behavior of the abnormal decay in nonsteady state of p-n junction at the termination of the injected current pulse is presented from the point of view of the discharge of its capacitance .

利用该方法，不仅可以得到二极管在不同电压下的串联电阻、结电容、结电压、理想化因子等值，还能判断一个实际的二极管有无界面层存在并得到其界面层阻抗值。

This method can not only accurately measure the values of series resistance , junction capacitance , junction voltage , and ideality factor at various forward biases , but also detect and measure an interfacial layer in a real diode .

从晶体管结电容自身的特点出发，对电源波动时频率产生异常变化的现象进行了分析和研究，具有一定的实际意义。

In the paper , based on the properties of transistor junction capacitor , we analyze and study deeply abnormal change of frequency when votage undulates and we also point out the usefulness of the result of this analysis in reality .

高频时，必须考虑结电容的影响，列出电路方程进行求解，这时三极管还可以看成是一个线性器件。

When the signal is High-frequency , the effects of junction capacitance must be considered , and the circuit equations are listed to solve the problem . At this time , the transistor can also be treated as a linear device .

利用半导体pn结结电容构成的沟道式电容器

Trench capacitors based on semiconductor pn junction capacitance

窄禁带半导体Hg（1-x）CdxTeP-N结的电容-电压特性曲线

Capacitance-Voltage Characteristics of P-N Junction of the Narrow Band-Gap Semiconductors Hg_ ( 1-x ) Cd_xTe