禁带

揭示了AlN/Si界面存在连续分布的载流子陷阱态，给出了陷阱态密度在Si禁带中随能量的分布；

The trap states distribution with the energy range at Si forbidden band was given .

结果表明，ID在禁带中产生～20meV的浅施主能级，其电活性起源于硅和二氧化硅沉淀的界面态。

The experimental results show that ID creates about a 20 meV donor level in the forbidden band , which originates from the interface states of precipitated Si / SiO2 .

确定了声子的能量Ep与禁带宽度Eg的值。

The phonon energy E , and the energy gap E , are ascertained .

Fe掺杂后石墨烯禁带宽度为1.51ev，且有磁性产生。

Fe-doped graphene owns the gap of 1.51 eV and existence of magnetism .

氧化镍是具有典型的3d电子结构的氧化物半导体，是一种p型半导体材料，禁带宽度是在3.6～4.0eV之间。

NiO is a p-type semiconductor material with typical 3d electron structure oxide . Its band gap is between 3.6-4.0 eV .

可控禁带ZnO纳米晶光阳极的制备及其光电性能研究

Preparation and Photoelectrochemical Study of Nanocrystalline ZnO Photoanode Electrodes with Controllable Band Gap

ZnO作为一种直接禁带半导体材料，具有压电，光电和掺杂过渡族元素后表现出的磁性。

ZnO is a direct band gap semiconductor with piezoelectric and photoelectric properties .

宽禁带SiC材料中杂质的分析研究

Studies of Impurities in a Wide Band Semiconductor SiC

宽禁带半导体MgxZn（1-x）O薄膜的研究报道

Report of Research on Wide-band-gap Semiconductor Mg_xZn_ ( 1-x ) O Thin Films

GaN是一种新型的宽禁带半导体兰色发光与激光材料。

GaN is a new wide band gap semiconductor laser material .

宽禁带半导体In2O3结构和性能的第一性原理研究

Characterization for the Structures and Properties of Wide Bandgap Semiconductor In_2O_3 by First-principle Calculations

激光器有源区材料的禁带宽度Eg。

The forbidden band width Eg of QW LD active layer materials .

ZnO作为一种宽禁带半导体材料，其拥有着良好的光电性能。

ZnO is a wide band-gap semiconductor material , and has excellent optical and electrical properties .

ZnO是一种新型的直接带隙的宽禁带半导体材料，在信息领域有着重要的应用。

ZnO is a novel wide direct-gap semiconductor . It has great uses in information age .

窄禁带Hg（0.79）Cd（0.21）Te的红外光致发光

Infrared photoluminescence from narrow gap hg_ ( 0.79 ) cd_ ( 0.21 ) te

针对利用E极化波第一禁带工作的光子晶体类曲折波导慢波结构，讨论了结构参量对此类慢波结构的色散及耦合阻抗的影响。

The photonic crystal folded waveguide slow-wave structure using the second photonic crystal band gap of E mode is also investigated .

ZnO是一种重要的功能材料和新型的Ⅱ-Ⅵ族宽禁带半导体材料。

Zinc oxide is an important functional and navel material of ⅱ - ⅵ wide bandgap semiconductor .

宽禁带GaN基半导体激光器进展

Recent Progress in Wide Bandgap GaN-based Semiconductor Laser Diodes

ZnO是新一代宽禁带、直接带隙的多功能Ⅱ-Ⅵ族半导体材料。

ZnO is a new generational multifunctional II - VI compound semiconductor with a wide and direct band gap .

近几年，ZnO作为宽禁带半导体受到人们越来越多的重视。

In recent years , ZnO , as a wide band semiconductor , has gained more and more attention .

首次利用Mn离子掺杂成功实现了ZnO薄膜的禁带宽度的调节。

For the first time ion implantation using Mn had successfully realized the ZnO thin film energy gap adjustment .

用PL和PC分别研究了掺铁半绝缘InP的禁带收缩现象和材料中的缺陷。

Band-gap narrowing phenomenon and defects in Fe doped SI InP are studied using PL and PC.

窄禁带半磁半导体Hg（1-x）MnxTe的磁化强度

Magnetization of Narrow GaP Semimagnetic Semiconductor Hg_ ( 1-x ) Mn_x Te

BN（n，0）纳米管的禁带宽度随着n的增大而增大，并收敛于5.39eV。

The band-gaps of BN ( n , 0 ) nanotubes also increase with the increase of n and converge at 5.39 eV .

ZnS是典型的直接宽禁带Ⅱ～Ⅵ族化合物半导体，室温下其禁带宽度为3.66eV。

ZnS is a typical direct broad bandgap ⅱ ~ ⅵ group compound semiconductor .

氨水浓度对CdS薄膜的光学性质也有很大的影响，随着氨水浓度的提高所得到的CdS薄膜的禁带宽度增大。

The ammonia concentration has greatly influenced the optical properties and the band gap of CdS thin films .

共振受主态在零禁带Hg（1-x）MnxTe磁量子输运中的影响

Resonant acceptor influenced quantum transport behavior of zero-gap p-hg_ ( 1-x ) mn_xte

讨论了三种旋转操作对TE，TM模式带隙及完全光子禁带的影响。

The effect of rotation on TE and TM mode band gaps and absolute band gap is investigated .

由于TiO2禁带较宽，对太阳能的利用效率较低，制约了其在实际中的应用。

However , their applications have been restricted due to wide band gap and low solar energy efficiency of TiO2 .

就目前研究较多的TiO2系光催化剂而言，其较宽的禁带宽度和较低的量子效率仍然是限制其发展的主要原因。

As far as the general TiO2 photocatalyst , the broad band gap and low quantum efficiency confine its development .