电子和空穴

数值结果表明，在SiO2薄膜中存在2个缺陷中心，电子和空穴就是通过这些缺陷中心复合而发光。

The numerical result dedicate that there are two defect center in SiO_2 films , electrons and holes are recombined through these center .

金属离子掺杂是改善TiO2光催化活性的一种有效方法，可阻止光生电子和空穴发生简单复合，能够有效提高TiO2纳米粒子的光催化反应效率。

It has been proved that metal doping would be a viable way to improve the photocatalytic activity of TiO2 , and prevent the simple combination of photogenerated electrons and holes , consequently improving the photocatalytic efficiency of TiO2 .

通过掺杂来控制所得纳米TiO2的粒径和相变过程，抑制电子和空穴的复合，扩大光谱响应范围，以取得的光催化活性良好的组分和组织。

Through controlling the crystalline diameters of TiO2 and phase transfer process ; restraining the complex of the electrons and cavities ;

这时电子和空穴各自分布在能带底，形成准费米狄拉克分布。这种热平衡费米分布可以用两个参数来描述，准费米能级μ和载流子温度Tc，开始时载流子温度高于晶格温度Tc>Tl。

The electron and hole system are described by a Fermi-Dirac distribution with two parameters : the quasi-Fermi level μ and the carrier temperature Tc which is initially higher than the lattice temperature Tc > TL.

介绍了硅材料本征载流子浓度ni、禁带宽度Eg、电子和空穴有效质量和及载流子迁移率μ的高温模型和计算结果。

In this paper , the high temperature models and calculation results of silicon materials ' intrinsic carrier concentration m , energy gap Eg , effective mass of electron and hole as well as carrier mobility p are introduced .

TiO2纳米粒子PL光谱的产生与其表面氧空位和缺陷有很大关系，并能够提供氧空位和缺陷浓度以及光生电子和空穴的分离与复合等信息。

PL spectra of TiO2 nanoparticles mainly resulted from surface oxygen vacancies and surface defects , providing the information of the seperation and recombination of photoinduced electrons and holes as well as the concentration of vacancies and defects .

同时光生载流子能在极短的时间内（20ps）跃迁到TiO2纳米颗粒表面，有利于电子和空穴的分离。

The carrier charges can transfer rapidly ( 20 ps ) to the titania grain surface . Accordingly , it is very beneficial to separate electrons and holes .

在实验中改变BCP的厚度，调整电子和空穴的注入平衡，控制发光层（EML）。

We appended a kind of hole blocking material ( BCP ) in the device and altered the thickness of BCP and adjusted the balance of the electron and hole to control the light-emitting zone .

样品的SPS谱和PL光谱与光催化活性之间存在一定的关系，即SPS和PL信号越强，光生电子和空穴分离效率越高，光催化活性越高。

Moreover , there are certain relationships among SPS and PL and the activity , i.e. , the stronger the SPS and PL signals , the larger the separation rate of photoinduced electron-hole pairs , the higher the photocatalytic activity of La doped TiO2 nanoparticles .

结果表明，对于阱宽较大情形，电子和空穴高度局域在QW边沿附近。

It is shown that , for the QW with wider well width , the electrons and holes are highly localized near the edges of the well due to the build in internal electric field .

这显示了Ti02纳米结构内在的光催化活性的加强是因为半导体在可见光下产生的光生电子和空穴有效分离。

It is shown that these nanocomposites can have enhanced photocatalytic activity via effective charge separation of photogenerated electrons and holes in TiO2 under visible-light irradiation .

但是，TiO2的禁带宽度较大，只有当波长小于387nm的紫外光激发时，才能产生电子和空穴，并且光生载流子极易复合。

But the problem with TiO2 is that , because of wide band gap , TiO2 can only be excited by the UV light of wavelength below 387 nm , and the photogenerated electrons and holes are easy to recombine .

这主要是因为在这个比例时，复合催化剂可以形成稳定均匀的结构，但过多的AgBr能够减短电子和空穴的捕获中心的距离，从而使电子和空穴的复合率增加。

The main reason is that photocatalyst can form a stable and uniform structure at this ratio . Excessive AgBr particles could shorten the mean distance between the trap centers of photoelectron and photohole which can lead to higher recombination of electron / hole pairs . 3 .

Franz-Keldysh效应随阱厚的增加而加强；压电极化和自发极化形成的内电场在空间上将电子和空穴隔开，但电子和空穴波函数的交叠允许它们在较低的能级上辐射复合；

Franz-Keldysh effect well enhanced with thickness increasing , inner electrical field induced by piezoelectricity and spontaneity polarization separated electron and hole spatially , radicalization recombination occured at lower energy level because of wave function overlap of electron and hole ;

激子就是由电子和空穴在相互间的库仑力作用下，相互维持在一起的电子&空穴对。

Exciton is electron-hole pair held together by their mutual Coulomb interaction .

本文讨论了半导体材料激发的光散射谱，主要包括传导电子和空穴的单粒子跃迁；

Light scattering spectroscopy cf excitation in semiconductors are discussed .

这种影响归结为电子和空穴的镜像电荷对电子与空穴的相互作用。

The polarization is described as interaction between electron ( hole ) and its image charge .

《半导体中的电子和空穴》岩穴与裂缝在孔的尺寸和孔分布上变化不一。

Electrons and Holes in Semiconductors Vugs and fractures are highly variable in size and in distribution .

电子和空穴的相互库仑吸引相互作用在形成纠缠态中扮演着一个重要的角色。

The attractive Coulomb interaction plays an important role in forming the entangled states of the system .

在无机材料中，他们的载流子有电子和空穴，都带有自旋和电荷。

In inorganic materials , their carriers are electron and hole that both possess their spin and charge .

在电场的作用下，电子和空穴以不同的速度沿着相反的方向运动。

Under application of an electric field , the electron and hole move in opposite directions at different velocities .

在绝热近似条件下，采用传递矩阵方法计算了电子和空穴的能谱。

The energy spectrum of the electron and hole is calculated using the transfer matrix formalism in the adiabatic approximation .

把作者过去的工作推广到电子和空穴质量不相等的普遍情形。

Our previous work is generalized to the case that the electron mass and the hole mass are not equal .

所有这些影响都会妨碍电子和空穴去继续它们作为准自由粒子的稳定运动，而引起散射。

All these prevent the electrons and holes from continuing their steady motion as quasi-free particles , and introduce scattering .

通过哈密顿量矩阵的对角化，对电子和空穴间的库仑相互作用进行了精确处理。

The Coulomb interaction between the electron and the hole is treated accurately by the direct diagonalization of the Hamiltonian matrix .

同时研究了金属/聚合物/金属三明治结构中电子和空穴注入与输运的动力学过程。

Finally , we discuss the injection and transport of electrons and holes in a metal / polymer / metal sandwich structure .

量子点中电子和空穴强的量子限制作用使其表现出一些新颖的物理性能，从而在微电子和光电子器件方面有着重要的应用价值。

Due to strong confinement effects of electrons and holes , QDs exhibit novel physical properties leading to important applications in microelectronics and optoelectronics .

同时，施加压力能改变其载流子浓度和位于多数自旋态的电子和空穴的迁移率。

We show that applying stress can alter the carrier concentration as well as mobility of the holes and electrons in the majority spin channel .

首次提出了超薄栅氧化层的经时击穿是由热电子和空穴共同作用导致的新观点。

This dissertation is the first report that points out the cooperation of hot electron and hole is essential for the TDDB of ultra-thin gate oxides .

但是光生电子和空穴不管是在材料体内还是表面都会发生复合，从而降低了材料的光催化效率。

But the photo-generated electrons and holes recombination occurs both inside and surface of the material , and the recombination reduces the efficiency of the photocatalysts .