局域态

结果指出，在室温下该薄膜的电导主要由带尾局域态决定。

As a result , it is found that the film conductance at room temperature is decided by localized state composition at band tail mainly .

因此，在实验中要调整好泵浦光脉冲的脉宽与能量的关系，脉宽越窄，单脉冲能量越大，可以保证局域态在一个脉冲时间内建立。

So in experiments the width of pulse and energy of pulse must be provided properly . The narrow pulse with great energy can make the localized state form in one pumping pulse .

在U（t，t′）方法框架下局域态密度的计算

Calculation of Local Density of States in the Framework of U ( t , t ′) Methods

另外，计入U、V使得电荷密度发生了重新分布，而且在缺陷及其周围格点上出现了束缚电荷；费米能级向能量升高的方向移动，并且在新的费米能级点出现了电子局域态。

Coulomb interaction V causes the inhomogeneous distribution of charge density , Fermi energy shift to high energy position and new Localized states appears .

差热分析、电子顺磁共振、X射线和电子衍射实验表明：该现象对应着样品中的非晶相晶化的过程，变化中电子态由局域态转变成扩展态。

The experiments show that the transformation process is corresponding to a crystallization process from noncrystal to crystal of the amorphous phase in the samples and in the process the electron state changes from localized to extended state .

用有限时域差分法（FDTD）和Padé近似分析了二维光子晶体的能带结构和缺陷引起的局域态。

The band structure of 2D photonic crystals ( PCs ) and localized states resulting from defects are analyzed by finite-difference time-domain ( FDTD ) technique and Pad é approximation .

我们通过模型计算，证实了在紧束缚模型下，Zigzag石墨带不存在带隙，是金属型，并且存在边界局域态。

Through the calculation , we prove that there is no band gap for Zigzag structure under the tight binding model . And edge states exist in this system .

本文建立Anderson体系的泛函积分理论中无穷阶独立谐波展式及其相应的磁化率X（T）和局域态平均电子数n1（T）的展式；

An expansion with infinite independent harmonics in a functional integral approach and the corresponding expansions of susceptibility X ( T ) and occupation number of electrons in localized states n1 ( T ) for Anderson system are derived in this paper .

由于Si－As成键而使Si的价带顶稍稍位移，局域态密度（LDOS）幅值明显下降。

The top of the valence band of Si has a slight shift due to the bonding between Si and As , and the amplitude of local density of states ( LDOS ) has a significant decrease .

数值计算结果表明，一维无公度系统Aubry模型存在扩展态、中间态和局域态。

Using numerical calculation , it is found that there are extended states , intermadiate states and localized states in the Aubry model of one-dimensional incommensurate systems .

结果发现，在无序存在和绝热条件下，BEC呈现出安德森定域化现象；局域态的中间区域宽度和尾部形状均受非线性空间调制影响。

The results show that there exists Anderson localization in the presence of disorder and adiabatic condition , It was found that the nonlinear spatial modulation has influence on the central region and the tail of the localized state .

伸展指数衰减函数中弥散指数β不仅不随温度变化，在250K也不随辐射能量变化，表明载流子的弥散过程由局域态之间的跳跃所主导。

The dispersive exponent β is not only independent of temperature , but also independent of emission energy at 250K , which indicates that the stretched exponential kinetics results from hopping of carriers among localized states .

能隙对称性；自旋涨落；局域态密度。

Gap Symmetry ; Spin Fluctuation ; Local Density of States .

氢化非晶硅局域态电荷密度的解析统一模型

An Analytic Unified Model of Trapped Charge in a-Si : H

通过格林函数可获得局域态密度。

The local density of states is obtained through Green function .

同时，电子&电子相互作用也会对边界局域态造成一定的影响。

At the same time , electron-electron interaction also influences the edge states .

一维纳米材料中电子局域态分布

Distribution of electronic localization in one-dimension nanometer material

一维无序体系的振动局域态

The localization of vibration in one-dimensional disordered system

泵浦强度强，局域态形成的时间越短。

Stronger the pumping intensity is , shorter the formation time of localized state .

量子围栏中的表面电子局域态密度及其模拟

The local density of states of surface electron in the quantum corral and simulation

介质阻挡放电中的局域态六边形结构

Localized hexagonal structure in dielectric barrier discharge

量子点的局域态密度明显依赖于点内的电子占据数。

The local density of states depends appreciably on the electron occupation of the dot .

渐近准周期势场中电子的局域态、扩展态和迁移率边界

The Localized State , Extended State of Electron and Mobility Edges in Asymptotic Quasiperiodic Potentials

而电子局域态密度分布在高能区的金属易失去电子，进行氧化反应。

The metal is easy lose electron when the density of electronic state spread is high .

一维杆状声子晶体振动中的表面局域态研究

Research on the surface localized vibration modes in one dimensinal phononic crystals composed of rod structures

氢分子吸附后，费米能级处的局域态密度增加。

The local density of states at the Fermi level increases with the adsorption of hydrogen molecules .

结果表明，在弱场情况下，激子主要在局域态之间隧穿；

Results show that for a weak field , the exciton mainly oscillates between two localized states ;

然后逐点计算局域态密度发现，在实空间准束缚态是一个非常局域化的效应，离开缺陷即迅速衰减。

The corresponding image of local density of states in real space shows a highly localized state around the defect .

光轴无序度增大时，出现扩散态向局域态的转变。

When the extent of disorder of optic axis increase , the state transition from diffusive regime to localized regime occurs .

模拟结果显示非增益介质中的局域态相当于传统激光腔的腔模，随机激光是由局域态谐振产生的。

In the presence of gain , any one of the localized modes can be amplified and serves as random lasing modes .