击穿

在介质击穿的情况下，出现了一种不同类型的加速。

In the case of dielectric breakdown , a different type of acceleration occurs .

沟道大电流感应n沟金属-氧化物-半导体场效应晶体管栅氧化层的加速击穿

Channel-Current-Induced Gate-Oxide Breakdown Acceleration in N-Channel MOSFET 's

PIN管的延迟击穿性能初步实验研究

Elementary study of PIN diode as device delayed breakdown

共面型GaAs光导开关的击穿特性研究

Research on breakdown character of coplanar GaAs photoconductive switch

穿通型pn结二极管的击穿电压

The breakdown voltage of punch through P n junction

可调谐TEACO2激光辐照SiH4击穿过程的研究

Study on the process of SiH_4 breakdown irradiated by frequency tunable TEA CO_2 laser

MOSFET栅下碰撞电离与击穿研究

The Research about Impact Ionization and Breakdown under Gate of MOSFET

GaAs光导开关的热击穿实验研究

Thermal runaway of the GaAs photoconductive switch

薄SiO2层击穿特性与临界陷阱密度

The Breakdown Character of Thin Oxide Film and Critical Trap Density

尖平板间隙中SF6人造空气的正极性冲击击穿特性

Positive Impulse Breakdown Characteristics of the Pin-Plane Gap in SF6-Artificial Air Mixture

薄SixOyNz膜击穿机理的研究

Study on the breakdown mechanism of a thin si_xo_yn_z film

SOI横向二极管击穿特性分析

An Analysis of Breakdown Voltage for Lateral SOI Diodes

这一局限性会导致不能及时采取适当的补救措施，从而致使GIS的绝缘状况进一步恶化甚至击穿。

This limitation can cause delay in appropriate remedial measures to be taken , leading to further deterioration of GIS insulation or a total breakdown .

局部放电（PD）是导致高压电工设备绝缘击穿的主要原因。

Partial Discharge ( PD ) is the main cause of insulation breaking down of HV equipments in power system .

薄栅SiO2相关击穿电荷的研究

Study on Charge to Breakdown of Thin Gate SiO_2

GaAs功率MESFET的栅-漏雪崩击穿

Gate - Drain Avalanche Breakdown in GaAs Power MESFET 's

空间电荷对SF6及其混合气体冲击击穿的作用

The effects of space charges on breakdown voltages of sf_6 and its mixture gases

6H－SiC平面状及圆柱状P~＋n结击穿电压的分析

Analysis of the Breakdown Voltages of 6H-silicon Carbide Parallel-plane p ￣ + n Junction and Cylindrical P ￣ + n Junction

同轴场中SF6及SF6/N2混合气体交流击穿特性及导电微粒的影响

AC Breakdown Characteristics of SF_6 and SF_6 / N_2 Mixture and Influence of Conducting Particles

同轴电缆头和转接头HPM击穿现象初步分析

Elementary analysis on breakdown phenomenon of coaxial - cable and connector

硅二极管I-V特性及二次击穿计算

Calculations of I-V characteristics and second breakdown of silicon diode

具有局域空穴槽结构的SOILDMOS击穿机理

The Breakdown Mechanism for SOI LDMOS with Local Holes Trench

关于薄SiO2的高场弛豫电导与击穿机制的研究

Study on Mechanism of Breakdown and Conductance Relaxation of Thin-Gate SiO_2 under High Electric Field Stresses

全耗尽SOILDMOS击穿电压的分析

Analysis of Breakdown Voltage of Fully Depleted SOI LDMOS

Fe3O4、Fe2O3对燃煤飞灰比电阻和击穿场强的影响

Effect of Fe_3O_4 and Fe_2O_3 on the specific resistivity and the field strength of electrical breakdown for coal fired fly ash

通过衬底热空穴（SHH，SubstrateHotHole）注入技术，对SHH增强的薄SiO2层击穿特性进行了研究。

SHH ( Substrate Hot Hole ) enhanced breakdown characteristic of thin SiO 2 is investigated by using SHH injection techniques .

研究不同类型、不同沟道长度的n沟金属－氧化物－半导体场效应晶体管（MOSFET）在不同栅电压下工作时栅氧化层的击穿特性。

This work extensively examines gate-oxide breakdown behaviors of n-MOSFET 's including both enhancement-type and depletion-type devices with various channel lengths under different operating conditions .

PTCR陶瓷之粒界结构与击穿特性

Crystal Boundary Structure and Breakdown Characteristics of PTCR Ceramics

场控P-N结击穿特性

Breakdown Voltage of the Field Controlled P-N Junction

4H-SiC器件击穿特性的新型解析模型

A new analytical model for the breakdown characteristic of 4H-SiC devices