GIDL

It is clearly found that the change of GIDL current before and after stress can be divided into two stages .

发现应力前后GIDL电流的变化可以分成两个阶段。

A likely mechanism is presented to explain the origin of SILC during GIDL stress .

对GIDL应力下SILC起因，提出了一个可能机理。

Characteristics of degradation under GIDL stress in ultrathin gate oxide LDD nMOSFET 's

超薄栅下LDDnMOSFET器件GIDL应力下退化特性

The behaviors of the GIDL stress in LDD NMOSFET are studied .

对LDDnMOSFET中的GIDL应力特性进行了研究。

DIFF implies the different influences of VD and VG on the GIDL tunneling current . It is due to the different hole tunneling in the lateral direction at the overlap region interface under the two conditions .

DIFF反映了VG和VD对GIDL隧穿电流影响的不同，这种差别是因为两种情形下的横向电场不一样，从而使得交叠区的硅中水平方向上空穴的隧穿产生差别。