绝缘层

拆卸绝缘层之前，必须拆下下列部件。

Before removing the insulation , the following components must be removed .

安装绝缘层并将固定卡子卡到位。

Install insulation and clip retaining clips into place .

低k绝缘层及其设备

The Low - k Insulating Layer and Its Equipment

高k绝缘层研究动态

Recent Researching Trends in the High-k Insulating Layer

4.5倍过电流PVC导线绝缘层特征的分析研究

Study of PVC Wire Insulation Residues Characteristic in 4.5 Times Over-current

一种用于RF技术的厚绝缘层上的铜电感

Copper Inductor on Thick Insulating Layer for RF Techniques

铜互连和金属间低K绝缘层可解决布线RC延迟问题，CMP可解决晶圆表面不平整问题。

The CMP technology solves the problem for non-smooth of wafer surface .

ZnO纳米线双绝缘层结构电致发光器件制备及特性研究

Development and behavior study of a ZnO nanowire-based electroluminescence device with double insulating-layer structure

糠醇改性聚胺-酰亚胺H级电绝缘层压板的形态结构与耐腐蚀性能

The Morphological Structure and Corrosion Resistance of Poly ( Amine-Imide ) Modified by Furfuryl Alcohol Laminates for H-Grade Electrical Insulating Materials

金属/绝缘层/硅（MIS）隧道二极管的发光机理

Mechanism of Light Emission From Metal / Insulator / Silicon ( MIS ) Tunnel Diode

本篇主要围绕着有关构成PCB绝缘层用树脂薄膜制造技术的主题。

The article had summarized mostly thin resin films laminated in PCB insulating layer .

介绍了一款由Hf基高K介质材料作为栅绝缘层制作的MOSFET。

In the end , this paper introduces a MOSFET fabricated by high-K gate dielectric .

在功率MOS器件中，作为绝缘层的SiO2质量相当关键。

Power MOS devices need high quality of SiO2 insulating film .

通过溅射的办法制备了各层电极、绝缘层以及FEA电阻层。

The electrodes , insulator layer and FEA layer are fabricated by sputtering .

f波超导体/绝缘层/f波超导体结中势垒散射对直流Josephson电流的影响

Barrier Interface Scattering Effect on DC Josephson Current in f-Wave Superconductor / f-Wave Superconductor Junctions

本文提出了一种用a-Si作绝缘层的表面变容二极管。

A Semiconductor surface varactor with an insulating a-Si layer is presented .

介绍了铜互连、金属间低K绝缘层和CMP工艺。

The Cu interconnection , low - K insulating layer between the metal and CMP technology are introduced .

在利用液相法生长ZnO纳米线薄膜的基础上，构造成功基于ZnO纳米线双绝缘层结构的交流电致发光器件。

ZnO nanowire thin film was prepared by chemical solution method and a ZnO nanowire-based electroluminescence device has been successfully developed .

具有SiO2绝缘层的硅基聚酰亚胺电容式湿度传感器的特性研究

Properties of the Polyimide Capacitive-type Humidity Sensor Based on Si Substrate with a SiO_2 Insulation Layer

在场致发光（EL）显示器中，当电子击中夹在两层绝缘层中间的荧光粉层时就产生光。

Electroluminescent ( EL ) displays produce light when electrons hit a phosphor layer sandwiched between two insulating layers .

正常金属-绝缘层-铁磁/超导结微分电导峰的Zeeman劈裂

Conductance peak with Zeeman splitting in normal metal-insulator-ferromagnet / superconductor tunnel junctions

因此，采用NO直接氧化法制备绝缘层是一种制备高可靠、高灵敏度Si基MOSSDS的技术。

So direct oxidation in NO gas for insulator is an effect technology to fabricate high reliability and high sensitivity MOS Schottky diode hydrogen gas sensor .

不对称s波超导体/绝缘层/s波超导体结的直流Josephson电流

The dc Josephson Current in the Unsymmetrical s-wave Superconductor / Insulator / s-wave Superconductor Junctions

为了抑制假模的出现，通过刻蚀沟道深隔离，并在沟槽上沉积SiO2介质绝缘层，增加沟槽对假模的吸收。

In order to suppress the appearance of so-called spurious modes , we etched deep grooves and deposited SiO2 in the grooves .

薄膜晶体管（ThinFilmTransistor，TFT）是由电极层、半导体层和绝缘层组成的场效应器件。

Thin film transistor ( TFT ) is a kind of field effect device , and it is composed of electrode layer , semiconductor layer and insulator layer .

同时，通过求解高k栅介质耗尽区与栅绝缘层区域的泊松方程，得到叠层高k栅介质阈值电压模型。

By solving the Poisson equation of the depletion region of high k gate dielectric and gate insulator region , the threshold voltage model of stack high k gate dielectric is got .

介绍了65nm/45nm工艺的研究成果、157nmF2stepper技术、高k绝缘层和低k绝缘层等技术。

The achievements to research the 65 nm / 45 nm technology , the 157 nm F2 stepper technology , high k and low k insulating material are introduced in this paper .

SOI指的是在IC的制造过程中采用硅+绝缘层+硅的硅基体结构方式，这种结构方式的优势是可以减小器件的寄生电容并改善器件的性能。

SOI refers to the use of a layered silicon-insulator-silicon substrate in IC manufacturing , which is said to reduce parasitic device capacitance and improve performance .

计算结果表明通过选择合适的过滤因子和绝缘层的厚度可获得大的TMR。

The large TMR can be achieved by choosing moderate spin filter factor and insulator layer thickness .

铜互连、金属间低k绝缘层（k<3）和CMP工艺已成为制造高端IC的一个标准工艺。

The Cu interconnection , low-k insulating layer ( k < 3 ) between the metal and CMP technology are a standard technology of the high grade IC manufacturing .