反向击穿

硅PN结反向击穿冷阴极研究

Research of cold cathode made-up of reverse breakdown silicon PN junction

本文报导了硅PN结反向击穿冷阴极电子发射源的研究结果。

The reverse breakdown silicon PN junction as a cold electron emission source has been studied and the results are reported here .

但就制备高反向击穿电压的微波PIN二极管而言，这些工艺已不能满足要求。

But as concerning microwave PIN diode of high breakdown voltage , the craft can 't already meet the demands .

采用工业标准06μMCMOS工艺设计了以反向击穿硅pn结为基础的光发射器件。

A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6 μ m industrial CMOS technology .

结果表明键合工艺制备PIN二极管不仅制造成本低，工艺简单，而且界面缺陷少，反向击穿电压高。

The results show that bonding PIN diodes are not only low fabrication cost , simple technology , but also few defects and high breakdown voltages .

通过利用突变结PIN理想结构电场分布模型，分析了该结构发光二极管（LED）反向击穿电压与非故意掺杂有源区厚度的线性相关性。

The linear relation between the reverse breakdown voltage and un-doping active region ′ s thickness of PIN light emitting diode ( LED ) was analyzed by using the ideal PIN structure ′ s electric field distribution model .

得到较为理想的反向击穿电压VBR，正向压降VF，反向恢复时间trr三参数之间的折衷。器件性能优良，可靠性高，样品通过150℃／168小时的高温反偏实验。

The excellent selections of breakdown voltage , forward voltage and reverse recovery time were obtained and the reliability of the device was pretty good .

源漏击穿电压和栅反向击穿电压分别为4V和7.5V。

Drain to source breakdown voltage and Schottky breakdown voltage are 4 V and 7.5 V , respectively .

首次提出了一种新型复合集电区结构，较好地解决了SHBT（单异质结双极晶体管）反向击穿电压低，DHBT电子堆积且与PIN探测器（PIN-PD）无法外延共享的问题。

A novel composite collector layer structure is presented for the first time , which better solves the poor breakdown voltage of SHBT ( single heterojunction bipolar transistor ) and the electron blocking efforts of traditional DHBT .

微条粒子探测器的反向击穿电压最高达240V，反向漏电流密度最低为0.025μA/mm2。

Their highest reverse breakdown voltage is 240 V , and the lowest reverse leakage current density is 0.025 μ A / mm 2.They have high illumination-sensitivity .

同时测试分析了该器件的IV特性：在室温下，正向开启电压为0.8V，反向击穿电压大于200V，反向漏电流小于10-10A；

The I V characteristics have also been measured . At room temperature , the forward turn on voltage is 0.8 V , the reverse breakdown voltage is higher than 200 V , and the leakage current is smaller than 10 - 10 A.

电子辐照对半导体器件反向击穿电压的影响

Influence of electron irradiation on backward breakdown voltage of semiconductor devices

化学腐蚀形成台面提高反向击穿电压；

Using chemical mesa etching to increase the breakdown voltage .

高压硅堆反向击穿特性自动测试系统

Automatic measurement system for reverse breakdown characteristic of high voltage silicon stack

除此之外，研究者多通过场致发光的方法对太阳能电池的反向击穿特性进行研究。

Some scientists study the solar cells breakdown features by the electroluminescent method .

反向击穿电压可能和作用区的宽度有关。

The reverse breakdown voltage may be related to the width of the active region .

反向击穿电压取决于晶态衬底的电阻率。

The reverse breakdown voltage is dependent on resistivity of the cry - stalline substrate .

尚未观察到反向击穿现象，可能原因是，在一定的反向偏压下的离子脱嵌使得它由部分氧化态（导电态）转变为还原态（绝缘态）；

The possible reason is that the conducting partial oxidized state is reduced into insulating reduced state un-der the applied reverse bias .

特点是采用反向击穿硅光电二极管做靶面，并用快电子扫描。

The distinguishing feature of this plan is to adopt silicon backward photoelectric diode as target screen and to scan with fast electron .

介绍了用于节能灯照明电路的高耐压功率晶体管的反向击穿电压、饱和压降和开关时间等参数的设计要求。

In this pager , the characteristics of high voltage switching power transistor used in electronics ballast , such as breakdown voltage , saturation voltage , and switching time are introduced .

当反向偏置形成时，半导体的连接点会有反向击穿电压。

Semiconductor junctions have a " reverse breakdown voltage " at which a reverse-biased junction begins to conduct .