反应室

MOCVD设备的反应室是核心部件，反应室设计的优劣直接关系到其所生长薄膜的质量。

However , the reactor chamber is the core component of the MOCVD equipment , whether the design of the reactor is better or not is directly related to the film quality grown by the MOCVD .

反应室沉积TiN／AlN复相陶瓷的研究

Study on Composite Ceramics TiN / AIN Depositing in Chamber

在Si3N4膜上利用光刻和沉积等工艺手段，可以制作出铂电阻温度传感器，用于控制反应室温度。

The platinum temperature sensor is deposited on the Si_3N_4 film .

用于GaN材料制备的MOCVD系统反应室模拟

Simulation of Reactor of MOCVD System Used for Manufacture of GaN Material

反应室的底为约2微米厚的氮化硅（Si3N4）膜。

The bottom of chamber is constructed by the film of Si_3N_4 with the thickness of 2 micrometers .

发现缓冲层的生长压力变化对退火后缓冲层表面的状态影响极大，增大缓冲层生长时的反应室压力可以明显提高外延GaN的晶体质量和光学质量。

It was found that growth pressure of buffer layer exerts a strong influence on the surface state of annealed buffer layer .

摸索了利用PECVD方法制备嵌埋于硅槽中Si反Opal结构的工艺条件，探索性研究了射频功率、气体流量、反应室压力、沉积时间和Opal基底状态对填充效果的影响。

A method to prepare the Si inverse Opal structure embedded in Si flute by PECVD was explored .

GaN-MOCVD设备反应室流场的CFD数值仿真

CFD Simulation of Flow Patterns in GaN-MOCVD Reactor

GaN-MOCVD系统反应室的CFD模拟研究

The CFD Simulation of GaN-MOCVD System Reactor

对气体隧道反应室的结构进行了优化，并重点研究了影响制备反应等离子喷涂TiN涂层性能的工艺参数，研究了涂层的力学、摩擦磨损及耐腐蚀等性能，探讨了涂层的形成机理。

The parameters of reactive plasma spraying TiN coatings have optimized , the mechanical and tribological and corrosion resistant properties of the coatings were investigated , and the formation mechanism was discussed .

当氮气轰击石墨靶时产生CN和N，它们在反应室的气相中并不反应，在到达衬底后才在衬底的表面上反应沉积形成薄膜。

In the model a Carbon target is bombarded by nitrogen to produce CN and C2N2.Chemical reactions between them and nitrogen gas happen only when they reach the hot surface of substrate .

反应室作为MOCVD设备的核心部件，其温度场的均匀性直接影响到生长材料的质量。

The temperature field uniformity of the reaction chamber , as the core component of MOCVD , directly influences the quality and properties of materials .

在成本有限的条件下，利用计算机进行MOCVD反应室模型的仿真和设计对实际设备的设计和改进将提供很大的帮助。

Under the limited cost , the MOCVD model is simulated and designed in computer , which can provide a great help to design and improve actual equipments .

反应室高度从12cm降到5cm时，峰值电子密度增加60%。

When the height of reactor decreases from 12 cm to 5 cm , the peak electron concentration increased by 60 percent .

基于MEMS技术研制了微结构的集成PCR-DNA分子扩增生物芯片，芯片集成了加热子、温度传感器、反应室、进样通道等；

An integrated microstructure PCR-DNA amplification biochip based on MEMS technology was fabricated , which includes heater , temperature sensor , reaction chamber and inlet channels .

实验发现，AlN生长速率与生长温度、反应室压力、NH3流量等参数之间表现出反常的依赖关系。

The abnormal dependencies of growth rate on growth temperature , reactor pressure , and flux of NH_3 are observed , and can be well explained by the effect of parasitic reaction .

而反应室温度的精确控制是MOCVD控制系统的关键，温度控制的好坏直接影响半导体材料生长的质量。

The accurate control of the MOCVD reactor is the key of the MOCVD technology , and temperature control will have a direct impact on the quality of the growth of semiconductor materials .

用CV技术测量其MOS结构平带电压，结果表明平带电压随氧等离子体处理时间、反应室气压和射频功率等条件的改变而变化。

The flat-band voltage was measured by the conventional MOS capacitance method . The results show that the flat-band voltage was dependent on the conditions of O 2 plasma such as reactant pressure , treatment time , and power .

GaN-MOCVD系统反应室流场的数值仿真声场强化微小流化床反应器流动特性研究

Numerical Simulation of Flow Patterns in the GaN-MOCVD Reactor Fluidization Properties in Micro-scale Fluidized Beds with Acoustic Intensification

依照西安电子科技大学立式MOCVD原型建立立式反应室模型，并模拟了反应室中流场、温度场分布和生长速率分布。

Secondly , model for the vertical MOCVD reactor of XiDian University was set up . On the foundation of the model , the flow field , temperature field and growth rate velocity distribution can be simulated .

研究并讨论了GaN的MOCVD生长中输入Ⅴ/Ⅲ比、进气口双束流上下比、总流量、反应室压力等工艺条件对局域Ⅴ/Ⅲ比的影响。

Then , the effects of input ⅴ / ⅲ ratio , total flow rate , up-to-low ratio of two-flow at the gas inlets , and reactor pressure on local ⅴ / ⅲ ratio are studied in MOCVD processes of GaN .

在水冷反应室式MWPCVD装置中以CH4和H2为反应气体进行了金刚石膜的沉积实验，研究了反应气体的压强对金刚石膜中非金刚石碳相含量的影响。

Influence of gas pressure on the content of non diamond phase carbon in diamond films , grown in CH 4 / H 2 gas mixture by microwave plasma chemical vapor deposition ( MWPCVD ), was studied .

通过对MOCVD技术参数与条件的研究，发现增加气体流量，缩短喷淋头到衬底的距离，增加冷却水流量等，可以有效的控制反应室中的温度分布，从而达到抑制气相预反应的目的。

Through the research of MOCVD parameters and conditions , larger gas flow rate , shortened distance between shower head and substrate , and increased cooling water flow rate are found to be effective ways to suppress the gas phase pre-reactions . 2 .

用外加热方式在管状反应室中对高速钢试样进行离子氮化，对氮化层的厚度变化、表面硬度及冲击韧性随H2／N2、渗氮温度及时间的变化进行研究。

High speed steel samples were ion nitrided in a tube reactor with an auxiliary heating furnace . The change of nitriding layer thickness , surface hardness and impact strength of the sample with H 2 / N 2 ratio , temperature and time were studied .

本文根据气流模型研究了反应室结构与光激发汽相淀积（PVD）SiO2薄膜均匀性的关系，并且讨论了工艺参数对PVDSiO2薄膜均匀性的影响。

Based on gas flow models , the correlation of reactor structure with the uniformity of photochemical vapor deposited ( PVD ) SiO2 films has been investigated and effect of process parameters on the uniformity of the film is discussed in this paper .

于自制石墨反应室中，用简单的气相化学反应法，在无空间限制和较低的温度下，合成出大量的高质量不带和带有非晶SiO2包覆层的β-SiC纳米线。

Large quantities of high-purity β - SiC nanowires without and with amorphous SiO2 wrapping layers have been synthesized at relatively low temperature and with no confined spaces via a new simple method - the vapor-chemical - reaction approach , in a homemade graphite reaction cell .

透射式GaAs光电阴极制作的关键是AlGaAs/GaAs四层结构外延层的MOCVD生长，影响AlGaAs/GaAs外延层结晶质量的主要因素是反应室结构、气体纯度以及衬底质量。

The key making process of transparent GaAs photocathode is the growth of A1GaAs / GaAs epitaxial layers by MOCVD . The major factors of affecting growth quality of AlGaAs / GaAs epitaxial layer are reactor structure of MOCVD equipment , purity of gas and quality of GaAs substrate .

为了获得金刚石薄膜的高速率大面积沉积，在国内首次研制成功了5kW带有石英真空窗的天线耦合水冷却不锈钢反应室式MPCVD装置。

KW antenna coupled MPCVD setup with a quartz vacuum window and water cooled stainless steel reaction chamber for higher depositing rate and lager depositing square was developed in China for the first time .

催化室，反应室[器]社会支持与心血管反应的实验室研究概述

A Review of Laboratory Research of Social Support and Cardiovascular Responses

电液压脉冲反应室水处理效果的实验研究

The Study on the Effect of Electro-hydraulic Impulse Reactor for Treating Wastewater