势垒高度

ZnO压敏陶瓷晶界势垒高度和宽度的研究

Research of Barrier Height and Width in ZnO Varistor Ceramics

ZnO-Bi2O3系压敏陶瓷的导电过程与等效势垒高度

The conduction process and the equivalent barrier height in ZnO-Bi_2O_3 based varistor ceramics

两类量子阱的电子势垒高度均随着衬底合金组分x的增加而增加。

For both the two electronic quantum wells , the barrier heights increase with the alloy composition x.

结果表明，当p型掺杂水平增高时，所需要的势垒高度减小，即Al组分减小。

The results indicate that the appropriate barrier height ( the Al mole fraction ) is lower when the p-doping concentration is higher .

在空气中退火，样品的施主浓度减少，势垒高度降低；在Ar气中退火样品的施主浓度基本保持不变，而势垒高度下降较大；

When samples annealed in air atmosphere , donor concentration and barrier height drops while donor concentration remains unchanged ;

提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型.介绍了国内外对高K栅极介质的研究现状。

The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed .

F钝化效应体现在：（1）降低了界面势垒高度（仅为～5meV），增加了载流子的迁移率；（2）淬灭了与缺陷相关的ZnO可见发射，提高了紫外发光效率。

F passivation ( 1 ) significantly decreases the grain boundary potential barrier ( ~ 5 meV ), thus increasing carrier mobility ;

硅衬底厚度和背接触势垒高度对MOS电容器性能的影响

Influence of Si-Substrate Thickness and Barrier Height of Back Contact upon the Characteristics of MOS Capacitor

作者予言，掺入金属元素使a-Si∶H半金属化，可望进一步降低肖特基势垒高度。

It is predicted that the Schottky barrier heights can be largely decreased by doping metal elements to alloy a-Si : H.

可调节势垒高度的Al／Si（1&x）Gex肖特基接触

Al / Si_ ( 1-x ) Gex / Si Schottky Contacts with Controllable Barrier Heights

晶界势垒高度测量表明：在实验范围内，Nb对势垒高度的影响较小。

Measurement of barrier height at grain boundaries revealed that the Nb_2O_5 concentration has less influence on barrier hight in this experimental range .

在常温下，Pt／TiO2界面处的电子电导对Pt／TiO2肖特基势垒高度的变化非常敏感。

At room temperature , the electronic conductivity across the Pt / TiO 2 interface leads to be extremely sensitive to the height of Schottky barrier .

因此，在理想金属-半导体接触的势垒高度理论计算中，采用半导体平均键能Em作为参考能级，可以获得比较可靠的计算结果。

This indicates that reliable calculation results can be obtained by taking E_m as the reference energy level in the calculation of the barrier height of ideal metal-semiconductor contacts .

采用电流-电压、电容测量、阻抗分析和势垒高度测量等实验手段，分析了Ta2O5和Nb2O5的作用机理。

Based on the results of measurements of electric current & voltage and capacitance , impedance analysis and barrier height measurement , the working mechanism of Ta_2O_3 and Nb_2O_5 was analyzed .

在电压应力下，SiO2中形成的缺陷不仅降低了SiO2的势垒高度，而且等效减小了SiO2的厚度（势垒宽度）。

During the stress process , the created traps in the oxide not only debase the height of the SiO_2 barrier , but also diminish the breadth of the barrier .

PtSi肖特基二极管的势垒高度制约PtSi红外探测器的截止波长和量子效率。

The cutoff wavelength and the quantum efficiency of PtSi infrared detector are restricted by its Schottky barrier height .

当×（Nb2O5）从0增加到1%时，Nb对势垒高度的影响较小。

When x ( Nb2O5 ) change 0 to 1 % , the height of potential was less influenced by Nb .

晶界势垒高度随电压的变化关系向我们进一步表明InN薄膜内部载流子输运特性是由于空穴在晶界处的积累决定的。

The relationship between the bias and barrier height illustrates the carrier transport properties in InN thin film is govern by the holes trapping at the grain boundary .

本文分析了UHF混频二极管的势垒高度、变频损耗和抗烧毁能量等主要参数，概述了制造技术。

This paper analyses the principal parameters of this diode : The height of barrier , conversion loss , and burnout energy . The fabrication technique is described .

采用Seto晶界理论，计算了Er离子掺杂薄膜的晶界势垒高度，分析了晶界电阻与注入量的关系。

Using Seto model , we calculate the grain-boundary barrier of Er doped CdTe films and analyze the varing dose influence on the grain-boundary resistance .

对所制备的3种结构器件的EL进行了比较，研究了结构对发光起因的影响，揭示通过调节有机层和无机层厚度以及界面势垒高度可以实现对发光区域的控制。

By changing the thickness of organic and inorganic layers or adjusting the relative height of barrier potential at organic-inorganic interface , we can control the emission zone and obtain different emission from each layer .

发现在不同真空度下，其表面能级ES（或表面势垒高度ψBP）和单位能量间隔的表面态密度DS等参数以及常温温区下的光伏值可有明显的差异。

It is found that under various vacuity there can be distinct difference of the parameters of surface energy level Es ( Or surface barrier height ? Bp ) and surface state density in per unit energy etc. and the photovoltaic values at room temperature region .

文中用于确定接触势垒高度的“本征半导体基态费米能级ESF，i”不同于半导体物理中所指的“本征费米能级Ei”。

The ground state Fermi level of the intrinsic semiconductor which can be used to determine the barrier height is different from the intrinsic Fermi level in semiconductor physics .

通过缺陷能级理论和pn结势垒高度变化，讨论了爆破噪声、gr噪声及多重gr噪声产生的原因。

The reasons of producing burst , g-r noise and multi-g-r noise are discussed on the basis of the theory of the defect energy level E_t and the variation of the height of the potential barrier of p-n junction .

在低温下，用弹道电子显微术（BEEM）及其谱线（BEES）测量了CoSi2/Si接触的局域肖特基势垒高度。

The local barrier heights of the CoSi 2 / Si contacts are determined by using the ballistic electron emission microscopy ( BEEM ) and its spectroscopy ( BEES ) at low temperature .

分析PtSi／Si结构测参数与膜特性的关系，用MonteCarlo方法计算了薄膜厚度、势垒高度同探测能力的关系，得到提高探测器探测能力的有效途径。

The relationship between the detect parameters of PtSi / Si infrared detector and the properties of the films was derived . The dependence of detecting capability on the thickness of thin film and barrier height was simulated by the Monte Carlo method .

Pt与n型ZnO接触的势垒高度为054eV。文中的ZnO肖特基二极管为首次研制的原型器件，其性能可以通过器件结构与制作工艺的进一步优化而得到改善。

The barrier height between Pt and n type ZnO was 0 54 eV . This is the first attempt toward ZnO thin film SBD , which has not been reported before and the performance of the ZnO SBD could be improved by optimizing the device structure and technology .

文中我们采用Lu的模型对上述实验结果进行了解释，认为由Si-P键构成的晶界势垒高度的变化是上述实验结果的根本原因。

The Lu 's model had been employed to explain the phenomena and the results which showed that the variation of the potential energy at the crystalline border caused by Si-P bonds is the fundamental reason .

退火后，Zn的扩散可以在p-InP表面形成重掺杂层，从而降低接触势垒高度，减小势垒宽度，有助于欧姆接触的形成；

A heavily doped layer is induced near the surface of p - InP by Zn diffusion after annealing , which can reduce the barrier height and width of the contact and do good to the formation of ohmic contact .

采用磁控溅射的方法在4H-SiC样品上分别沉积四种金属薄膜（Ag，Cu，Ni，Cr）形成Schottky接触，研究了不同温度退火对Schottky势垒高度的影响。

Schottky barriers were formed by sputtering the metals on the front side of 4H-SiC ( Si face ) by magnetron sputtering to study the rectifying characteristics of the contacts between the metals and 4H-SiC . The infections of the annealing under different temperature were also studied .