击穿电压

BP神经网络在大型发电机主绝缘击穿电压预测中的初步应用

Preliminary application of BP neural network in predicting breakdown voltage of large generator ground wall insulation

结果表明训练好的BP神经网络对该批更换线棒击穿电压的预测是可行的，并有较高的准确度。

We found that it 's feasible and much accurate of neural network to predict breakdown voltage .

冲击电压波形对GIS由固定导电粒引发的击穿电压的影响

Influence of Impulse Voltage Waveshape on particle Initiated Breakdown Voltages of GIS

高斯掺杂分布GaAs肖特基结的雪崩击穿电压

Avalanche Breakdown Voltage Calculation of GaAs Gaussian Profile Schottky Diodes

GaAs超突变结变容管的C&V特性和击穿电压

C-V Characteristic and Breakdown Voltage of GaAs Hyperabrupt Junction Varactors

新型低击穿电压He-Ne激光器

A New Type of He-Ne Laser Tube with Low Breakdown Voltage

穿通型pn结二极管的击穿电压

The breakdown voltage of punch through P n junction

SF6气体间隙低概率冲击击穿电压的计算

Calculation of Low Probability Impulse Breakdown Voltage in the SF6 Gap

利用PN结的C-V特性来测其击穿电压

To Measure Breakdown Voltage of PN Junction by Its Characteristic

注入空间电荷对SF6气体中尖&板间隙正冲击击穿电压的影响

Effect of Injected Space Charges on the Positive Breakdown Voltage of Point-plane Gaps

但就制备高反向击穿电压的微波PIN二极管而言，这些工艺已不能满足要求。

But as concerning microwave PIN diode of high breakdown voltage , the craft can 't already meet the demands .

SF6绝缘设计中击穿电压分布函数计算方法探讨

Explorations on Calculation Method of Breakdown Voltage Distribution Function for Insulation Design of SF_6

6H－SiC平面状及圆柱状P~＋n结击穿电压的分析

Analysis of the Breakdown Voltages of 6H-silicon Carbide Parallel-plane p ￣ + n Junction and Cylindrical P ￣ + n Junction

全耗尽SOILDMOS击穿电压的分析

Analysis of Breakdown Voltage of Fully Depleted SOI LDMOS

p-n结击穿电压蠕变饱和陷阱理论的改进

The improvement of the theory of walkout in p-n junctions including charge trapping saturation

结果表明键合工艺制备PIN二极管不仅制造成本低，工艺简单，而且界面缺陷少，反向击穿电压高。

The results show that bonding PIN diodes are not only low fabrication cost , simple technology , but also few defects and high breakdown voltages .

加场极板LDMOS的击穿电压的分析

Analysis of LDMOS breakdown voltage after using field plate

本文介绍了新型低击穿电压He-Ne激光器的基本工作原理与特性。

In this paper , the basic principle and characters for a new He-Ne laser tube with low breakdown voltage are described .

VDMOS结构击穿电压的设计与分析

The design and analysis of breakdown voltage in VDMOS structure

VDMOS击穿电压与导通电阻的最佳设计

VDMOS Optimum Design of Breakdown Voltage and on & Resistance

GAT管击穿电压的数值分析

The Numerical Analysis of Breakdown Voltage of GAT

GaNFP-HEMTs中击穿电压与电流崩塌的关系

Relation between breakdown voltage and current collapse in GaN FP-HEMTs

其中考虑了SiO2、柱面结、球面结等击穿电压对参数确定的限制。

The limitation on the parameters design brought by the breakdown voltage of SiO 2 、 the cylindrical junction and the spherical junction are also involved .

指出并联绝缘子串间击穿电压相比单串时有所降低，而V字型串对击穿电压的影响很小。

It is presented that the flashover voltage of parallel insulator is lower than that of single insulator , while the V type insulator 's is almost the same as that of single one .

耐压能力是功率MOSFET的最重要性能，通常在器件的应用选型中，击穿电压是作为首要的考虑指标。

Blocking capacity is the key parameter of Power MOSFET . Usually in the device selection , the breakdown voltage is considered as a primary indicator .

实验结果显示：HfO2栅介质电容具有良好的C-V特性，较低的漏电流和较高的击穿电压。

Results show that HfO 2 gate dielectric hold good electrical characteristics .

PN结构成了几乎所有半导体功率器件的基础，其雪崩击穿电压直接决定了相关器件的工作电压范围。

PN junction is the foundation of almost all the power devices . The avalanche breakdown voltage of PN junction determines the work voltage range of related power devices .

本文讨论了BP神经网络在谏壁7号机更换线棒主绝缘击穿电压预测中的应用。

In this paper , we discussed a BP neural network that was used to predict the breakdown voltage of the large generator ground wall insulation of rewind bars of the Jianbi Power Plant No. 7 generator .

不明放电不定时性和升高端电压抑制放电的机理，可以用发生Townsend放电时击穿电压V与气压和距离的乘积Pd之间的帕邢定律来解释。

Using the relationship between V and Pd in Townsend discharge , the uncertainty of its appearance and the mechanism of the increasing voltage suppressing method can be explained .

结果表明，当SF6气体压力或SF6/N2中的SF6气体分压力大于电晕稳定效应的临界压力时，间隙的击穿电压随着温度的降低而下降；

The results show that breakdown voltages will decrease when the temperatures decrease for the pressure higher than the critical pressure at which the corona stabilization disappears .