低温多晶硅

同时对低温多晶硅与非晶硅作了成本对比。

We also examine the cost of LTPs vs amorphous silicon .

本文设计并仿真分析了基于低温多晶硅的OLED象素驱动电路；

Pixel drive circuits for OLED were designed and analyzed by simulating .

一种基于低温多晶硅TFT技术的柔性8位异步微处理器

A Flexible 8-bit Asynchronous Microprocessor Based on Low-Temperature Poly-Silicon ( LTPS ) TFT Technology

低温多晶硅薄膜晶体管（LTPSTFT）广泛应用于平板显示。

Low temperature polycrystalline silicon thin film transistors ( LTPS TFTs ) are widely used in the flat panel displays .

本文对低温多晶硅薄膜晶体管（TFT）AM-OLED的驱动技术进行了研究。

This paper aims at the research on drive technology of LTPS ( Low Temperature Poly-Silicon ) TFT ( Thin Film Transistor ) AM-OLEDs .

东芝公司的低温多晶硅TFT-LCDs

Toshiba 's Low_Temperature Polysilicon TFT_LCDs

介绍基于低温多晶硅TFT技术和采用激光退火表面刻蚀技术的柔性8位异步微处理器，并且给出了异步电路描述语言Verilog+。

A flexible 8-bit asynchronous microprocessor based on low-temperature poly-silicon ( LTPS ) TFT technology , surface free technology by laser annealing and ablation ( SUFTLA ) and asynchronous circuit description language Verilog + is presented .

研究分场数字灰度方案，以提高低温多晶硅（LTPS）有源驱动有机电致发光显示器（AM-OLED）的亮度均匀性和灰度精确性。

For low temperature poly-silicon ( LTPS ) active matrix organic light emitting display ( AM-OLED ), the digital gray scale of sub-field can significantly improves the light uniformity and gray scale accuracy .

运用分场数字灰度技术可以提高低温多晶硅（LTPS）AM-OLED显示屏的灰度精确性和亮度均匀性。

Time-ratio gray-scale ( TRG ) technology can improve the grey scale accuracy and the brightness uniformity of low temperature poly-silicon ( LTPS ) active matrix organic light emitting display ( AM-OLED ) .

研究了低温多晶硅发射极晶体管的频率特性及其温度关系。

The temperature dependence of frequency characteristics of PET is researched on .

周围动脉假性动脉瘤高品质低温多晶硅薄膜晶体管的制作与周边一体化设计

Fabrication of LTPS TFT with High Qualities and Design for Integration of Peripheral Drive Circuits

低温多晶硅发射极晶体管电流增益和截止频率的解析模型

The Analytical Model of Current Gain and Cutoff Frequency of Polysilicon Emitter Transistors for Low Temperature Operation

用SiCl4-H2低温沉积多晶硅薄膜微结构的Raman分析

Raman analysis of microstructure of polycrystalline silicon films deposited at low-temperatures from SiCl_4-H_2

采用ECR-PECVD技术低温生长多晶硅薄膜

Low-Temperature Growth of Polycrystalline Silicon Thin Films by ECR-PECVD

SiCl4-H2为气源低温制备多晶硅薄膜

Preparation of poly-silicon thin film in low temperature using SiCl_4 / H_2 gas source

ECR-PECVD方法低温制备多晶硅薄膜

Low Temperature Deposition of Poly-Silicon Thin Films by ECR-PECVD

本论文主要对催化化学气相沉积（Cat-CVD）法低温制备多晶硅薄膜的工艺技术及所得材料性能进行了研究。

In this thesis , the technology of catalytic chemical vapor deposition ( Cat-CVD ) and p-Si material prepared by Cat-CVD at low temperature are studied mainly .

金属铝诱导法低温制备多晶硅薄膜

Preparation of Polycrystalline Silicon Films by Aluminum - Induced Crystallization at Low Temperature

热丝法低温制备多晶硅薄膜及其特性分析

Low-temperature Deposition of Poly-silicon Thin Films by Hot-wire CVD and the Analysis on Characteristics

以硅带为衬底低温制备多晶硅薄膜的研究浸透润滑脂的衬片，制动器的摩擦片

Studies on Preparing Poly-Si Thin Film on Ssp Substrate at Low-temperature ; grease-soaked lining

低温快速生长多晶硅薄膜

Fast Growth of Polycrystalline silicon Film

热丝化学气相沉积技术低温制备多晶硅薄膜的结构与光电特性

Structual and optoelectronic properties of polycrystalline silicon thin films prepared by hot-wire chemical vapor deposition at low temperatures

用拉曼散射谱研究以SiCl4H2为气源，用射频辉光放电等离子体增强化学气相沉积技术，在200℃低温下沉积多晶硅薄膜的微结构特征。

The microstructure of polycrystalline silicon films prepared at 200 ℃ by radio frequency ( RF ) glow discharge plasma-enhanced chemical vapor deposition technique from SiCl 4 / H 2 has been investigated by Raman scattering .