通过向阱中填充低介电常数的物质，深阱结构还能抑制工艺上的横向扩散，并能承受比硅材料更大的峰值电场。
It has been shown that by filling the trench with lower dielectric constant materials , it can restrain the horizontal diffusion and endure a peak electric field stronger than the silicon material .
低介电常数物质