间接带隙半导体

硅是间接带隙半导体，不能有效地发光。

Silicon is an indirect bandgap semiconductor emitting light inefficiently .

但由于SiC是一种间接带隙半导体材料，其在光学方面上的应用受到了很大限制。

But as we know , SiC is an indirect band gap material , which limits the applications on optic aspects .

然而si是间接带隙半导体，其内部存在着很多非辐射复合机制，导致Si材料的发光性能很差，这就限制了Si在光电集成领域的应用。

However silicon has an indirect band gap , and there are many non-radiative recombination mechanism inside the silicon . All these aspects leads to the poor optical property of silicon , and restrict the application of Si in the field of optoelectronic integration .

结果表明，闪锌矿结构和纤锌矿结构CdSe为直接带隙半导体材料；盐岩结构CdSe为间接带隙半导体材料；CsCl结构CdSe为半金属材料。

The obtained results indicate that CdSe with zinc blende structure and wurtzite structure are direct band gap semiconductors ; CdSe with rock-salt structure is indirect band gap semiconductor ; CdSe with CsCl structure is semimetal .

硅材料的禁带宽度较窄，为间接带隙半导体，发光效率很低。

Silicon is a indirect band gap semiconductor , whose light-emitting efficiency is very low .

硅作为当前研究的热点领域，即光电集成的基本材料，一个主要的缺点就是它是间接带隙半导体，自身只能发射极微弱的红外光。

A great drawback is the fact that silicon , the basic material for photonics which is the hot field of research and technology , is an indirect-gap semiconductor which emits light in the infrared and at very low efficiencies .

对于提高间接带隙半导体材料的发光效率，一般有以下两个途径。其一，降低材料的维数，这将使材料的发光效率得到显著提高。

There are two ways to improve the luminescence efficiency of indirect band gap semiconductor , one is lowering the dimension of materials , the other is introducing luminescent centers into the materials , and these two ways can remarkably improve the luminescence efficiency and intensity .

硅是微电子学中应用最为广泛的材料，但由于硅是间接带隙的半导体，禁带宽度窄，发光效率很低，因而限制了它在光电子领域中的应用。

Silicon is most widely used in the study of micro-electronic materials , but because silicon is an indirect band gap semiconductor , a narrow band gap , low luminescence efficiency , and thus restricting its application in the field of optoelectronics .