紫外光刻胶

248nm深紫外光刻胶

Evolution and progress of deep UV 248 nm photoresists

从193nm光刻胶的各个组分，如：主体树脂、光致产酸剂、溶解抑制剂、碱性添加剂以及存在的问题和解决途径等多个方面综述了193nm深紫外光刻胶的发展与现状。

This paper describes the evolution and status of the 193 nm photoresists in aspects of matrix resins , photo-acid generator , dissolution inhibitor , base additives , existing problems and ways of solutions .

环氧基紫外负性光刻胶的特性、应用工艺与展望

The properties , application processing and Prospect of epoxy-based negative photoresist SU-8

紫外激光曝光光刻SU-8胶的工艺研究

Research of SU-8 Resist Lithography Using Ultraviolet Laser

首先分析了激光紫外光源与普通紫外光源在单色性与方向性上的差异，论证了采用激光紫外光源曝光SU-8光刻胶的优势。

The differences of the monochromaticity and the direction of ultraviolet laser and non-laser ultraviolet source are analyzed firstly . The advantage of ultraviolet laser in exposing SU-8 photoresist is discussed .