氮化硅

利用椭圆偏振光谱、反射谱、红外吸收谱和准稳态光电导（QSSPC）分析了氮化硅薄膜的特性。

The characterization of SiN thin films was studied by spectral ellipsometry , reflection spectra , infrared absorption spectroscopy ( IR ) and quasi-steady state photoconductance ( QSSPC ) measurements .

低温氮化硅薄膜的介电性能研究

Dielectric properties of SiN x films deposited at low temperature

用连续波CO2激光对氮化硅陶瓷打孔的实验研究

Experimental investigation on laser drilling of si_3n_4 ceramics with CW co_2 laser

N2O等离子体处理对富硅氮化硅薄膜发光的影响

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

用于软X射线显微术的氮化硅窗口的研制

Fabrication of Si_3N_4 Windows for Soft X-Ray Microscopy

氮化硅陶瓷烧结微结构演化的同步辐射CT实时研究

In Situ Observation of the Microstructure-evolution in Silicon Nitride Ceramics Sintering by Synchrotron Radiation X-ray Computed Tomography

保温时间对GPS氮化硅陶瓷晶界相及力学性能的影响

Effects of Holding Time on Intergranular Phase and Mechanical Property of GPS Silicon Nitride Ceramics

以YAG为晶界相的重烧结氮化硅的微观结构和性能

Microstructure and properties of post-sintered RBSN with YAG as grain-boundary phase

Y2O3和CeO2对氮化硅烧结性能的影响

Effect of Y_2O_3 and CeO_2 on Sintering Properties of Si_3N_4 Ceramics

稀土Lu2O3增强氮化硅陶瓷的结构与性能

Microstructure and Performance of Silicon Nitride Ceramics with Lu_2O_3 Additives

氮化硅陶瓷高温蠕变行为及Y2O3和CeO2的影响

High Temperature Creep Behavior of Si_3N_4 Ceramics and Effect of Y_2O_3 and CeO_2

以YAG为添加剂的气压烧结氮化硅

Gas Pressure Sintered Silicon Nitride with YAG Additive

等离子体增强CVD氮化硅作硅太阳电池的减反射膜

Plasma-enhanced CVD silicon nitride as antireflection coating of silicon solar cells

室温下掺Er富硅氧化硅和掺Er富硅氮化硅的光致发光及其退火

Photoluminescence from Er-doped Silicon-rich Silicon Oxide Film and Er-doped Silicon-rich Silicon Nitride Film and Its Annealing Behavior

氮化硅（Si3N4）微粉的超高压烧结研究

A study on sintering behavior of silicon nitride si_3n_4 micro powder under high pressures

初步分析和探讨氮化硅薄膜的力学性能对RFMEMS开关器件性能的影响。

The effect of silicon nitride film mechanical properties on the performances of RF MEMS switch device was researched .

流态化合成氮化硅的鼓泡床热模试验与CFD模拟研究

Study on the Thermal State Experiment and CFD Simulation of Bubbling Fluidized Bed of Synthesis of Si_3N_4

氮化硅薄膜的AES研究

AES investigation of silicon nitride film

用氮化硅薄膜作为悬梁，制作金属-金属接触式射频MEMS开关。

The metal-metal contact series RF MEMS switch was made , whose suspended beam was made of silicon nitride film .

反应室的底为约2微米厚的氮化硅（Si3N4）膜。

The bottom of chamber is constructed by the film of Si_3N_4 with the thickness of 2 micrometers .

LPCVD氮化硅表面氧化膜的XPS研究

The study of surface oxide film on LPCVD silicon nitride by XPS

采用热弹塑性有限元法分析了热压氮化硅（Si＿3N＿4）和K－500合金扩散焊接引起的残余应力状态。

In this paper , thermal elasto-plastic FEM is used to analyze the residual stresses induced bySi_3N_4 / K-500 diffusion bonding .

衬底温度对PECVD氮化硅膜性质的影响

Effects of Substrate Temperature on the Properties of PECVD SiN Films

PECVD氮化硅膜的性质与生长条件的关系

Correlations between the Properties of PECVD SIN Films and Their Deposition Conditions

用微米级SiO2、Si和碳黑混合粉末为原料，以氮气为反应气，采用碳热还原法合成了氮化硅纳米粉体。

Si_3N_4 nanoparticles were synthesized by chemical vapor deposition ( CVD ) using Si , SiO_2 and C micro-particles as a raw material .

实验发现随着基板温度的增加，氮化硅薄膜的密度、折射率和Si/N比相应增加，而沉积速率和H含量相应减少；

With the increment of substrate temperature , the density , refractive index and Si / N ratio of SiNx film increase , but deposition rate and H content decrease .

RE2O3-Al2O3-SiO2玻璃连接氮化硅合成复相陶瓷的研究

Bonding of Silicon Nitride Ceramic Composite with RE_2O_3 Al_2O_3 SiO_2 Glass Solders

利用X射线衍射应力分析的sin2ψ法测量、计算出氮化硅陶瓷试样的残余应力。

The principle of residual stress analysis by X ray diffraction was introduced .

交替频率PECVD方法沉积低应力氮化硅薄膜及其性质研究

Characterization of low stress sin_x films deposited by PECVD with alternative RF frequency

α-Si3N4晶种对层状多孔氮化硅陶瓷性能的影响

Effects of α - Si_3N_4 seeds on properties of porous laminated silicon nitride ceramics