氮化物

ⅣB族金属氮化物及其纳米复合材料的合成与性能

Formation and Properties of ⅳ B Transition Metal Nitride and Nanocomposite Materials

Cr基金属氮化物涂层改善冷冲模性能的研究

An improvement on the properties of cold punch by Cr-based metal nitride hard coating

碱性氮化物包括吡啶和喹啉。

The basic nitrogen compounds include pyridines and quinolines .

本文系统研究了GAP（聚缩水甘油叠氮化物）的固化体系。

The curing system of GAP ( Glycidyl Azide Polymer ) has been studied .

纳米Fe粉制备的高性能NdFe（10.5）Mo（1.5）Nx氮化物

High-performance NdFe_ ( 10.5 ) Mo_ ( 1.5 ) N_x nitrides prepared by nano-sized Fe powder

目的在金属钛表层制备以氮化钛（TiN）为主的氮化物膜层。

Objective To synthesize the surface film which consisted of TiN on pure titanium .

目前，III族氮化物半导体光电特性应用上研究上不断取得了令人振奋的突破。

III nitride semiconductors are currently experiencing the most exciting photoelectric characteristics development .

研制了三类不同金属和III族氮化物接触的肖特基势垒二极管。

Schottky barrier diodes with different metal on III nitride have been fabricated .

沸石催化合成金刚烷（4）Hβ催化剂。碱性氮化物对分子筛裂化催化剂失活动力学函数的考察

The kinetic study of the deactivation effect of basic nitrogen compounds on the zeolite catalyst in the light fuel oil cracking

钢中（Nb，V）碳氮化物应变诱导析出动力学

Kinetics of strain-induced precipitation of ( nb , v ) carbonitride in a microalloyed steel

氮化物半导体GaN的光辅助湿法腐蚀

Light Assisted Wet Etching of Semiconductor Nitride GaN

含Nb、V、Ti钢连铸坯中碳、氮化物的析出及钢的高温塑性

Carbide and Nitride Precipitation and Hot Ductility of Continuous Cast Steel Slabs Containing Nb , V , Ti

III-Ⅴ族氮化物及其高亮度蓝光LED外延片的MOCVD生长和性质研究

Study on MOCVD Growth and Properties of III - ⅴ Nitrides and High Brightness Blue LED Wafers

半导体照明广泛应用的关键是提高氮化物LED芯片的发光效率。

It is very important to improve luminous efficiency of LED , which is the key issue for the massive application of solid state lighting .

Ti、Nb碳氮化物在整个轧制过程均有析出，V的碳氮化物只存在较低温度变形时析出。

And Ti-Nb carbo-nitride precipitated at whole rolling course , but V carbo-nitride precipitated only at lower rolling temperature .

采用PS复合溶剂脱除催化柴油中的碱性氮化物，以改善催化柴油的质量和储存安定性；

FCC diesel oil was extracted with mixted PS solvent for enhancing its quality and stability in storage .

Ⅲ&Ⅴ氮化物与蓝光LEDs（Ⅰ）

ⅲ - ⅴ Nitride and blue light LEDs ( ⅰ )

SiO2涂层对多孔氮化物陶瓷材料性能影响初探

Influence of Fused SiO_2 Coating on the Porous Ceramic

而III族氮化物半导体场发射研究作为其光电特性的重要研究方向，引起了人们广泛关注。

As an important photoelectric exposure , field emission properties of III nitride semiconductors have attracted widely interestingness of researchers .

III族氮化物量子点中类氢施主杂质位置对束缚激子结合能的影响

Effects of hydrogenic donor impurity position on the binding energy of a bound exciton in ⅲ - nitrides quantum dots

对高含量的V，Nb，Ti三种微合金钢进行固溶与等温时效热处理试验，深入研究微合金元素碳氮化物在铁素体区中的析出行为。

By means of solid soluting and isothermal aging , the precipitation behavior of microalloy carbonitride in ferrite has been studied .

Nd3（Fe，Mo）（29）化合物及其氮化物的磁结构和内禀磁性

Magnetic Transition and the Intrinsic Magnetic Properties of Nd_3 ( Fe , Mo ) _ ( 29 ) Compound and Its Nitride

其主要原因是TiN膜层的化学效应和亚稳相氮化物的形成。

It is mainly related with the chemical effect of the film and presumably associated with the formation of metastable phase of nitride .

以GaN为代表的Ⅲ-Ⅴ族氮化物半导体材料，是近十年发展起来的第三代半导体材料。

The III-V nitride-semiconductor as represented by GaN is the third generation of semiconductor materials developing in recent decade .

将计算所得正则离域分子轨道进行定域化处理，发现产生这种电负性差异的主要原因是在上述两类叠氮化物中N3的成键状况不同，本文对此进行了较为细致的分析。

The difference for electronegativity of N_3 in molecular-type and ionic-type azides may be due to the different bonding properties , which is found from the detail research about LMOs .

GaN基半导体器件的商业化使得当前对Ⅲ族氮化物的研究发展迅猛。

The commercialization of GaN based on semiconductor devices gives a boost to the rapid development in III-Nitrides researching fields .

V和V-N微合金化低碳钢碳氮化物的形变析出

Precipitation Behavior and Effects of Vanadium Carbonitride in V and V-N Microalloyed Mild Steel During Multi-Pass Deformation

通过透射电镜复型技术、定量金相、X光荧光分析详细研究了三种不同工艺的A，B，C，WX60钢中铌的碳氮化物的析出和溶解行为。

TEM using extracted replica , quantitative metallography , and X-ray fluoroscopic analysis have been carried out to study the precipitation and dissolution behavior of niobium carbonitrides in three steels produced by differen processes .

MOCVD是生长Ⅲ族氮化物材料最成功的技术之一。

MOCVD is one of the most successful technologies in the growth of group ⅲ nitride .

MOCVD生长Ⅲ族氮化物镓源的选择

Selection of Gallium Growth by MOCVD