氧化膜

经X射线衍射（XRD）分析发现，K2SiO3在阳极氧化中的作用主要是改变阳极氧化膜的成份；

The function of K_2SiO_3 in anodic oxidation is to change the composition of anodizing film and form by XRD .

电沉积Cr2O3氧化膜对Fe3Al氧化性能的影响

Effect of Electrodeposited Cr _2o_3 oxide film on the oxidation of fe_3al

FeNiCr封接合金的高温氧化及氧化膜、氧化物晶须的结构

High temperature oxidation and structure of scale and whiskers for Fe-Ni-Cr sealing alloys

通过SEM扫描电镜观察了氧化膜的表面形貌。

The surface morphology was observed by SEM .

采用SEM对试样表面生成氧化膜的形貌进行了观察比较。

The morphology of oxide membrane on each sample surface was observed by SEM .

利用X射线衍射分析（XRD）了氧化膜的结构，结果表明氧化膜为非晶态。

X ray diffraction ( XRD ) analysis reveals that the film is amorphous structure .

Ti3SiC2氧化膜的抗循环氧化行为

The cyclic oxidation behavior of ti_3sic_2-based ceramic

CMOS工艺氧化膜完整性的评估

Evaluation on the Integrity of Oxides in CMOS Process

合金氧化膜的AES分析技术及其应用研究

AES analysis technique of oxide films on alloys and its application

时间对CO2反应法在氢化锆表面生成氧化膜影响分析

Influence of Time upon Oxide Film on the Surface of the Zirconium - Hydride by the Method of CO2 Reaction

CeO2质点对Al2O3型氧化膜和膜／基体界面的原子结合能的影响

Effect of CeO_2 on Atomic Connection Energies in AL_2O_3-type Scale and at the Scale / Substrate Interface

用钌钛氧化膜电极电解食盐水时pH对放氧速率的影响及其机理的探讨

On the Influence of pH on Kinetics and Rate of Oxygen Evolution at Ti Electrode Covered with Film of RuO_2 and TiO_2

论文的主要内容及创新性研究归纳如下：1、研究了sol-gel技术在制备高介电常数复合氧化膜中的应用。

Sol-gel technology was used in making composite oxide films which have high dielectric constant .

0.18μMCMOS工艺栅极氧化膜可靠性的衬底和工艺依存性

Substrate and process dependence of gate oxide reliability of 0.18 μ m dual gate CMOS process

铝阳极氧化膜表面TiO2的制备和表征

Preparation and Characterization of TiO_2 on Surface of Alumina-Anode Oxidation Film

弥散CeO2对高温下α－Al2O3氧化膜初期生长的影响

Effect of ceo_2 dispersion on initial stage growth of α - al_2o_3 oxide scale at high temperature

熔化情况下Zr（-4）合金包壳管氧化膜厚度变化的计算

Calculation of the Oxide Film Thickness Changing for Zircaloy Cladding in In-pile Meltdown Case

X光电子能谱表明，在Al－1.17%Cu合金氧化膜下的过饱和空位造成的空位坑中，有较大的Cu的偏聚。

X-ray photoelectron spectroscopy shows that there is Cu segregation in vacancy condensation pits below oxidation layer of Al-1.17 % Cu alloy sample .

采用透射电镜（TEM）观察了草酸溶液中形成的铝阳极氧化膜中纳米级微孔的形貌。

The micro-holes in alumite film anodized in oxalic acid are investigated by transmission electron microscopy ( TEM ) .

由于Al表面存在较厚的氧化膜，沉积于Al衬底的DLC膜与非金属衬底上的相似。

The DLC film on AI substrate is same as the non-metallic substrate because there is thick oxide-layer on Al .

锡盐着色膜颜色与氧化膜中Sn含量的关系

Relation Between the Color of Sn-Salt Coloring Oxide Film and the Sn-Content in the Oxide Film

采用XRD和EPMA分析了其氧化膜的结构和组成。

The structure and components of the oxide scales were analyzed by XRD and EPMA .

XRD分析表明陶瓷氧化膜中含有γ-Al2O3和α-Al2O3晶相成分，其中α-Al2O3相随氧化时间增多。

The analysis using XRD points out that there are gamma-Al2O3 and alpha - Al2O3 crystal in the ceramic oxide-film .

铝高压阳极氧化制备Al2O3-PTFE复合氧化膜

Preparation of Al_2O_3-PTFE Composite Anodizing Film on Al by High Voltage Anodization

铝阳极氧化膜在SeO3~（2-）溶液中电解着色

Electrolytic Coloring of Anodizing Al Film in SeO_3 ~ 2 - Solution

利用俄歇电子能谱（AES）进行氧化膜元素深度剖析发现，在含0.3%铍的镁合金液表面生成的氧化膜可以分为3个亚层：最外层为氧化镁层；

AES depth profile analysis showed that the surface oxide film could be divided into three sub layers .

结果发现：微弧氧化方法适合于Ti在甘油磷酸钠和醋酸钙电解液中形成富含有Ca和P的氧化膜。

It was found that the MAO method is suitable for Ti to form oxide film containing Ca and P in the electrolyte of β - GP and CA.

用SEM对阳极氧化膜表面形貌和横截面形貌进行了观察，发现氧化膜表面形成了均匀孔洞，且与基体金属有很好的结合，并对此作出了合理的分析。

The surface of anodizing film have homogeneous distributions of small holes and good combination between the film and matrix alloy is found by SEM .

结果表明，在稀磷酸溶液中对TiN薄膜进行阳极氧化处理后，在TiN表面形成一层氧化膜。

It is shown that a thin layer of oxide film is formed on surfaces of TiN films anodized in dilute phosphoric acid solution .

在钛盐溶液中，采用交流电沉积方法，在铝阳极氧化膜表面制备了TiO2薄膜。

Titanium dioxide film was prepared on the surface of alumina-anode oxidation film via AC electrodeposition in the solution of titanic salt .