正向电流

  • 网络forward current;DC Forward Current
正向电流正向电流
  1. 根据LED伏安特性曲线和LED正向电流与相对发光效率的关系曲线,采用曲线拟合的方法,得到各自关系曲线的表达式,利用表达式设计LED光电模型。

    According to the LED volt-ampere characteristic curve and the LED forward current and the relative luminous efficiency curve , each curve expression can be obtained by using the curve fitting method .

  2. 温度越高,正向电流越小,反向电流越大。其理想因子随温度的增加而增加。

    The higher the temperature , the forward current is smaller , and the reverse current and the ideal factor are the greater .

  3. SiC大功率二极管的研制水平,标定阻断电压达12.3kV,正向电流密度达100A/cm2。

    The SiC power diode with blocking voltage up to 12.3 kV and current density up to 100A / cm ~ 2 has been developed .

  4. 脉冲电镀的正向电流密度对深镀能力的影响

    The Effect of Forward Current Density of PPR on Throwing Power

  5. CdTe/CdS多晶薄膜太阳能电池正向电流的计算机模拟分析

    Computer Analysis of Forward Currents in Thin Film Polycrystalline CdTe / CdS Solar Cells

  6. 随着正向电流的加大,孔洞的直径增大,膜层的厚度快速增加后略微减少。

    With forward current increasing , the diameter of the holes is increased and the thickness of the coating first increases quickly and then decreases slightly .

  7. 由单片机组成的控制系统可实现电镀参数的完全可控,正向电流大小、脉宽,负向电流大小、脉宽,间隔时间、工作时间均可由程序控制。

    Forward current , reverse current , pulse width , interval time , work time can be controlled by the program , thus , the system can make plating parameters controlled completely .

  8. 高温正向栅电流下Ti/Pt/Au栅SiCMESFET的栅退化机理

    Gate Degradation Mechanisms of Ti / Pt / Au-Gate SiC MESFET Induced by High-Temperature Forward Large-Current Density

  9. 为了能够精确控制LED的正向平均电流,通过在峰值电流控制的基础上增加一个电流外环,我们提出了一种新的控制方法:I~2控制方法。

    In order to control the average current of LED accurately , a new control method , called as I ~ 2 control technique , is proposed by added a new current outer loop into the PCM control technique .

  10. AVR精简指令集高速单片机控制器用于控制辅助板,实现供电电压、正向供电电流、反向供电电流以及仪器内部温度的采集和存储。

    AVR was designed to collect and deposit power supply voltage , forward direction supply current , reversal supply current , and temperature inside the instrument .

  11. 可控硅的额定正向平均电流的有效值电压PRV应大于负载电流的有效值;

    Virtual value of the frontage average currency of SCR ( PVR ) should be no less than the virtual value of the loading currency ;

  12. 报道了利用Si基键合技术和化学机械抛光工艺制作的垂直结构的Fabry-Perot可调谐滤波器,调谐机理为pn结正向注入电流引起的热光效应。

    A Si Fabry-Perot tunable filter by the technique of bonding and lapping and its design and fabrication are reported , where tuning is realized by thermal-optical effect from the heat of the forward carrier injection .

  13. 硅整流器,通用,高电压,标准回收率(表面贴装)。经常性最大峰值反向电压400V。最大平均正向整流电流1A。

    Silicon rectifier , general purpose , high voltage , standard recovery ( surface mount ) . Max recurrent peak reverse voltage400V.Max average forward rectified current1A .

  14. 当传感器在2mA的正向偏置电流下,由于少数载流子的不连续性以及多数载流子的注入,传感器电阻的正温度系数(PTC)区拓宽到573K(+300℃)以上。

    When the sensor is forward biased at a current of 2 mA , the range of positive temperature coefficient of the sensor resistance is extended up to + 300 C as a result of the minority current discontinuity and majority carrier injection .

  15. 增加交流发电机用整流二级管正向输出电流的途径

    The Ways to Increase the Forward Output Current of Alternator Rectifying Diode

  16. 非晶硅太阳电池的正向注入电流检测磁共振研究

    Forward Injeted Current Detection of Magnetic Resonance in a-Si : H Solar Cell

  17. 研究表明此种电池器件具有大的正向扩散电流、小的反向漂移电流,说明其具有典型的单向导电性。

    Researches show that such hybrid solar cells have big positive spread current and small reverse current drift , suggesting the typical characteristics of p-n heterojunction , i.e. , one-way electrical conductivity .

  18. 结果表明:当正向脉冲平均电流密度为1.5A/dm2,占空比为20%,频率为250Hz时,所得的镍镀层的耐腐蚀性能最好。

    The results indicated that the as-deposited nickel coating with the best corrosion resistance was synthesized by the optimized plating parameters : positive average pulse current density 1.5 A / dm2 , duty cycle 20 % and frequency 250 Hz .

  19. n-ZnO/p-Si异质结,正向和反向电流均随外加电压按指数函数关系增大,符合突变反型异质结的扩散模型的正反向势垒的情形;

    The forward and reverse current of n-ZnO / p-Si increase exponentially with applied voltage , which corresponds with instance at positive reverse barrier .

  20. 指出,通过合理的设计可以使该种新器件具有很低的截止态高温泄漏电流,很高的截止态击穿电压,足够大的正向导通电流和足够低的正向导通压降。

    It is indicated that excellent characteristics of off state leakage current at high temperatures and very high off state breakdown voltage and sufficiently large forward current and low forward voltage drop may be obtained by reasonable designs .

  21. 在14&25K的温区里,出现正向伏安特性曲线交叉、击穿电压峰以及当正向注入电流恒定时正向电压随温度变化特性呈现非单调性。

    There appeared in 14-25 K range the curves cross of formard voltage-current , breakdown voltage peaks and the non-monotonicity of forward voltage-temperature when forward current was constant .

  22. 由于正向结电压小于内建电势差,温度升高或正向结电压增加,正向结电流将增大,温度升高反向结电流也相应增加。

    Due to positive junction volt smaller than build-up potential inside PN junction , the positive junction current increases with the raise of temperature or positive junction volt , and the reverse junction current also increases with temperature .