杂质带

通过计算结构的有效折射率，证实了杂质带色散是正常色散。

After calculating the effective refractive index of the structure , we have verified that the impurity band has a normal dispersion .

一维光子晶体中多缺陷耦合导致的杂质带

The Impurity Band Based-on Defects Coupled in One-dimensional Photonic Crystal

强磁场下n型InSb杂质带及其电导的理论

Theory of Conductivity and Impurity Band of n-InSb under Strong Magnetic Field

GaP1-xNx混晶的PL谱从低组分的NN对束缚激子及其声子伴线到高组分杂质带发光的特征，表现出明显的带隙降低的趋势。

The GaP_ ( 1-x ) N_x alloys display obvious band-gap reduction characteristic , with the PL spectra developing from nitrogen bound excitons and their phonon replicas under low x composition to impurity band emission under high x composition .

含负折射率缺陷的一维光子晶体的杂质带

Impurity Band in One-dimensional Photonic Crystal Containing Defect Layers with Negative Refractive Index

基于杂质带的光子晶体矩形波形滤波器的实现

The Realization of Rectangular wave Filter Based on the Photonic Crystals Impurity Band

计算结果表明，如果改变缺陷的折射率，缺陷模之间的耦合作用将发生改变，使得能隙中的杂质带也随之改变。

It is found that when the refractive index of defects is changed , the coupling effect between the defect modes is varied , which results in the change of the impurity band .

研究发现，随着温度的降低，重掺直拉单晶硅的导电机制会发生转变，逐渐由导带（价带）导电为主转变为杂质带导电为主，并且发生转变的温度范围随着掺杂浓度增大而升高。

It is found that the conduction mechanism shifts gradually from conduction ( or valence ) band conduction to impurity band conduction with decreasing temperature , and the shifting temperature range becomes higher as the doping concentration increases .

理论研究表明，在基于光子晶体的耦合腔波导中，杂质带的色散性质取决于相邻缺陷间局域电磁场的特性，而非缺陷间距离的大小。

We found that the dispersive properties of impurity bands in a coupled-resonator optical waveguide based on photonic crystals depend on the properties of the fields localized at the two neighboring defects instead of the distance of the defects .

本文的第三部分讨论了单杂质能带自旋-费米格点模型，利用MonteCarlo方法计算了系统的态密度和光学电导。

A simple single impurity band spin-fermi lattice model is discussed using Monte Carlo simulations . The density of states and optical conductivity are calculated .

另外杂质能带可以增加费米能级处的态密度，增大Seebeck系数。

Concurrently , impurity band can increase the density of states at the Fermi level and hence enlarge the Seebeck coefficient .

超晶格中浅杂质能带与光吸收

Shallow Impurity Energy Band and Optical Absorption in Superlattice

杂质能带的带宽和能态密度；

The energy state density ;

得出的结果表明：（1）中性施主杂质体系和带负电施主杂质体系的基态能量都会随着磁通量的变化发生振荡，即A-B振荡。

We analyze and discuss the calculation results in detail , which show that : ( 1 ) The ground state energy of the neutral donor impurity system and charged donor impurity system will oscillate ( A-B oscillation ) with the change of magnetic flux .

所得杂质能级在带隙中的位置与实验结果基本一致。

The computed values of the energy levels of the deep impurity in silicon are in good agreement with experimental results .

被杂质染色或者带上颜色，被杂质污染的。排污口有机污染物的GC/MS/AMDIS定性分析

Marked or dyed or discolored with foreign matter . Qualitative determination of organic pollutants in drain outlet by GC / MS / AMDIS

胶州湾、莱州湾潮间带沉积物污染比较被杂质染色或者带上颜色，被杂质污染的。

Comparison between Sedimental Contamination in Intertidal Zone of Jiaozhou Bay and the Counterpart of Laizhou Bay marked or dyed or discolored with foreign matter .

杂质对两能带超导体性质的影响

The influence of the impurity scattering on the properties of two-band superconductors

本文简要介绍从杂质工程到能带工程的发展过程，以及能带工程的三种基本方法。

This article briefly introduces the development from impurity engineering to energy band engineering and three methods of energy band engineering .

除以较多篇幅研究各种定域化振动模的位置外，本文还从键&电荷模型出发讨论了杂质诱发振动吸收带的强度。

In addition to the frequency position of various localized vibration modes induced by different impurities , we have also paid attention to the intensities of the absorption bands of the vibration modes and discussed them in the light of bond-charge model .

我们计算并详细分析了它们的杂质形成能、能带结构和分态密度，按照杂质带的特性分为四类进行讨论。

The defect formation energies , the band structures and the density of states were calculated to analyze the energetic properties and electronic structures of 4d doped TiO2 . The doped TiO2 was classified four parts by their characteristic impurity band .

本文结合这种器件计算和讨论了超晶格中浅杂质能谱和光吸收，给出了：杂质能带；

Based on the consideration of this device , the paper calculates and discusses the shallow impurity energy level and optical absorption and presents : the impurity band ;