施主杂质

浅施主杂质态在n－Hg（1－x）CdxTe磁致金属－绝缘体相变中的作用

Effect of Shallow Donor on Magnetic-Field-Induced Metal-Insulator Transition in n-Hg_ ( 1-x ) Cd_xTe

类氢施主杂质量子环能级和束缚能的B样条计算按可能引起污染的程度被定级设施

Calculation of Energy and Binding Energy of Hydrogen-like Donor Impurity Quantum Ring with B-spline Technique

利用B样条技术计算类氢施主杂质量子环能级和束缚能的量子尺寸效应。

The size-dependent effect of energy and binding energy of hydrogen-like donor impurity quantum ring are calculated with B-spline technique .

在p型和n型半导体材料之间渡越区中的一个面，在这里施主杂质和受主杂质的浓度相等。

The surface in the transition region between p-type and n-type semiconductor material at which the donor and acceptor concentration are equal .

掺施主杂质半导体中LO声子的反对称光电导响应的MonteCarlo模拟

Monte Carlo Simulation for Photoconductivity Response of LO Phonon in Shallow Donor Doped Semiconductors

GaAs中Te施主杂质的EER谱

EER spectrum of the impurity in gaas : te

III族氮化物量子点中类氢施主杂质位置对束缚激子结合能的影响

Effects of hydrogenic donor impurity position on the binding energy of a bound exciton in ⅲ - nitrides quantum dots

讨论了产生分布尾的原因，认为与GaAs衬底中残留Si等浅施主杂质和高温退火时Cr再分布有关。

The origin of profile tail in connection with Si background in GaAs substrate and Cr redistribution during high temperature annealing was discussed .

探讨了施主杂质、受主杂质等微量元素及玻璃料对PTC陶瓷性能的影响。

Effects of donors , acceptors , and other trace elements and the frit on properties of the PTC ceramics are discussed .

浅施主杂质在对称GaAs/AlxGa（1-x）As双量子阱中的束缚能

Binding Energy of Shallow-donor Impurities in Symmetrical GaAs / Al_xGa_ ( 1-x ) As Double Quantum Wells

FTIR光谱表明，充当施主杂质中心的氮原子在薄膜退火过程中存在被激活的现象，从而提高了电导率。

FTIR spectra analysis results show that the nitrogen atom as an impurity center has an " activation " process during the thermal treatment , which leads to the increase of the electrical conductivity .

研究了施主杂质Nb2O5，碱金属氧化物添加物Li2O和烧成温度对低温一次烧成SrTiO3陶瓷晶界层电容器介电性能和显微结构的影响。

In this paper , the effects of donor dopant Nb_2O_5 , alkali oxide additive Li_2O and sintering temperature on the dielectric properties and microstructure of SrTiO_3 OBBL capacitors single-fired at low temperature are studied .

本文综述了TiO2电容-压敏陶瓷性能以及施主杂质、受主杂质、烧结助剂的研究现状，并对其进行了展望。

The recent developments on the research for the TiO2 capacitor-varistor ceramics were reviewed in this paper , which contain donor impurity , acceptor impurity and sintering improver , and the evolution of it was forecast at the same time .

应用高斯型势阱模拟STM针尖势场或2DEG中施主杂质势场的作用，发现高斯势阱可以会聚电子波。

We use a Gaussian well to imitate the effect of STM tip or donor impurity , and find it can focus the electron wave like lens focus light .

过少的注入剂量还无法完全补偿AZO薄膜中的本征缺陷和施主杂质缺陷，而过量的注入剂量则会引入新的缺陷。（ⅲ）退火处理是ZnO薄膜p型改性的重要一环。

Too much or less implantation dose cannot achieve p-type ZnO because too less dose cannot fully compensate the intrinsic defects in the AZO films while excessive dose introduces new defects . (ⅲ) Annealing process is a vital ring in the whole chain of p-ZnO film fabrication .

得出的结果表明：（1）中性施主杂质体系和带负电施主杂质体系的基态能量都会随着磁通量的变化发生振荡，即A-B振荡。

We analyze and discuss the calculation results in detail , which show that : ( 1 ) The ground state energy of the neutral donor impurity system and charged donor impurity system will oscillate ( A-B oscillation ) with the change of magnetic flux .

发现锂离子嵌入氧化铜电极的反应始于2.5V（vs.Li/Li~+），锂以施主杂质状态存在于氧化铜晶格中，改变了阴极的半导体性质。

It is found that Li + ions start inserting into CuO lattice at 2 . 5 V ( vs. Li / Li + ) and act as the donor impurities , changing the semiconductor property of the cathode . The electrode processes of the complex were presented .

半导体结构束缚下各向异性施主杂质中的混沌

Chaos in the Anisotropic Donor Impurity in a Semiconductor Structures

量子线中施主杂质的光致电离截面

The photoionization cross section of donor impurities in the quantum well wires

渐变能隙超晶格结构中的施主杂质性质的研究

Study of the Donor Property in Superlattice Structure of Graded Changing Energy Gap

非对称势阱中施主杂质的束缚能

Binding Energy of Donor in Asymmetric Quantum Well

半无限晶体近表面内浅态施主杂质的基态能量

The Ground State Energy of Shallow Donor Impurities near the Surface of Semi-infinite Crystal

外加压力时双纳米线中浅施主杂质的性质

Studies on property of shallow donor impurity in symmetrical double nanometer-wires under compressive stress

本文用变分法计算了半无限晶体近表面内浅态施主杂质的基态能量。

The ground state energies of a shallow donor impurity near a sharp surface of a semi-infinite crystal are studied .

本文采用二级微扰方法研究厚度对抛物量子点内浅施主杂质处于磁场中极化子效应的影响。

Thickness effect on the shallow donor in parabolic quantum dots within magnetic fields is investigated by using the second-order perturbation method .

施主杂质产生的内偏场可以改善铁电材料的发射状况、决定极化脉冲极性的设计；阴极发射能力与阴极厚度的三分之四次方成正比；

The internal bias field came from the donator impurity will improve the imitation of the cathode and decide the polarity used polarization pulse .

分数维近似方法研究：矩形量子阱线中浅施主杂质结合能探用傅里叶变换光谱仪同时测定半导体浅施主和浅受主杂质浓度的装置

Fractional-dimension approach for shallow-donor states in quantum-well wires an experimental set-up combined with a Fourier transform spectrometer for simultaneous determination of concentrations of both shallow acceptors and donors in semiconductors

实验表明，施主杂质（La~（3+））和受主杂质（Mn~（2+））掺杂量的大小对薄膜半导化和绝缘化程度都有影响。

The experiment results demonstrated that the semiconducting and insulating process were influenced by the donor dopant ( La ~ ( 3 + )) and acceptor dopant ( Mn ~ ( 2 + )) .

采用连续电介质理论计入对材料介电常数的修正，利用变分法讨论半导体单异质结中界面附近的单电子束缚于施主杂质的基态结合能。

A variational method is adopted to investigate the ground state binding energy of an electron bound to a donor impurity near the interface of a single semiconductor heterojunction by considering the modification of the dielectric constant within a continuous dielectric theory .

对半导体单异质结系统，引入三角势近似异质结势，考虑电子对杂质库仑势的屏蔽影响，利用变分法讨论在界面附近束缚于正施主杂质的单电子基态能量。

A variational method is used to investigate the ground state of an electron bound to a donor impurity near a single semiconductor heterojunction by considering the influence of a triangular potential and the screened Coulombic impurity potential . The screening effect is considered with the random phase approximation .