发光中心

共激活剂Br~-，I~-对ZnS：Mn，Cu·X发光中心的影响

Effect of Activator and Co activator on the Luminescence Center of ZnS : Mn , Cu Material

红光发射带为硫元素进入晶格后在发光中心周围形成了类似长余辉材料CaS∶Eu2+，Cl-的局域结构。

The red emission band indicates the local structure of luminescence center is quite similar with the traditional long-afterglow phosphor CaS ∶ Eu2 + Cl - .

射频磁控溅射沉积的ZnO薄膜的光致发光中心与漂移

Photoluminescence centers and shift of ZnO films deposited by rf magnetron sputtering

镓铟磷三元化合物中的自由激子和杂质N发光中心的结构位形

The free exciton and the configu-ration of the luminescence centers due to n impurity in ( ga , in ) p

并对Er发光中心的组成和光激发机制作了分析讨论。

The formation and optical excitation mechanism of Er luminescence centers in the samples were analysed .

ZnO薄膜的室温光致发光谱是由发光中心在413nm~424nm处的单一紫光组成。

The strong single violet emission centering about 413nm ~ 424nm was observed in the room temperature PL spectra of the ZnO films .

这是由于随着Mn掺杂浓度的提高，Mn2+发光中心的密度增加，导带光电子与发光中心的碰撞几率增大，寿命降低。

This is due to the factor that the colliding probability of photoelectrons with luminescent centers increases as the concentration of Mn 2 + increasing .

铕的掺杂并没有形成新的发光中心，但却极大的增强了ZnS的缺陷发光。

Doping of europium did not induce new luminescent centers , but caused the luminescent efficiency of defects to increase greatly .

我们认为处理后老化性能改善的原因，不是改善了发光中心的条件，可能是改善了Cu2S相的条件，因而抑制了离子的迁移。

The reason for the improvement of the phosphor maintenance is attributed to the improvement of the condition of Cu2S phase , but not that the of luminescent center .

认为刻划造成的高密度缺陷区为氧化硅提供了新的发光中心并对其中某些杂质起了吸除作用，导致PL和EL光谱改变。

It is believed that the high defect-density region produced by the score provides the SiO_2 layer with new luminescence centers and getters some impurities in it , as results in the change in EL and PL spectra .

但生长停顿的时间过长，阱的厚度会变薄，界面质量变差，不仅In组分变低，富In的发光中心减少，而且会引入杂质，致使EL强度下降。

But if the interruption time was too long , the well thickness and the average in composition of MQWs decreased , and the EL intensity also decreased due to poor interface quality and impurity derived by growth interruption .

这些方法主要包括：采用高密度和小尺寸的有序Si量子点、光学微腔结构、表面钝化处理技术和稀土发光中心掺杂。

These methods including the ordered Si quantum dots with high density and small size , the use of optical microcavity structure , surface passivation technologies , and doping of rare earth luminescent centers , which are very important for the fabrication of high luminescent intensity Si quantum dots .

此外，He离子的注入还会在单晶Si中产生明显发光中心，导致了波长约为680nm和930nm的两个光致发光带。

Moreover , He ion implantation can also induce luminescence centers in silicon , which gives rise to photoluminescence bands centered at wavelengths of about 680 nm and 930 nm , respectively .

本文对新晶体BHA：Cr~（3+）（BeO·3Al2O3：Cr~（3+））的荧光谱进行了仔细辨认，发现晶体中存在着几种不同的发光中心。提出了不同Cr离子中心之间的能量传递模型。

Origin of sharp luminescence lines in BeO · 3A1_2O_3 : Cr ~ ( 3 + ) crystal , several different luminescence centers were found , and the energy transfer models among different Cr ion centers were put forward .

观测到520nm，549nm与612nm三个分裂的尖吸收峰以及以1358nm为发光中心的吸收带。

The three split absorption peaks at 520 , 549 and 612 nm , and a wide band centered at 1358 nm were observed .

最近Fujimoto等人发现铋掺杂的硅酸盐玻璃在800nm激发下可以得到发光中心在1300nm的宽带近红外发光。

Recently , Fujimoto et al reported the near infrared broadband emission centered at about 1300 nm from bismuth-doped ( simplifized Bi-doped ) silicate glass excited by 800 nm .

紫外光激发下，玻璃中的Ce3＋发射强的蓝紫光，光谱和荧光寿命的分析结果表明，Ce3＋在这种稀土硼酸盐玻璃中形成两种性质不同的发光中心。

In BLBL : Ce 3 + glasses , Ce 3 + emits strong purplish blue light . The results of analyzing spectra and fluorescence lifetime show that there are two kinds of Ce 3 + luminescence centres in this kind of rare earth borate glasses .

铜发光中心的分布和位错显微结构的关系

The relation between distribution of Cu centers and microstructure of dislocation

氧化锌发光中心的统计力学模型

A model of statistical mechanics for the luminescence centers of ZnO

发光中心的自发辐射寿命对介质的依赖关系分析

Dependence of spontaneous radiative lifetime of luminescent centers on the surrounding media

离子注入掺铒硅发光中心的光致发光研究

Photoluminescence Study on Luminescence Centers in Erbium Implanted Silicon

约900℃退火，形成具有光学活性的Er-O发光中心。

The optical active emission centre related to Er-0 obtained by 900 ℃ annealing .

并用量子限制模型和发光中心模型对实验结果进行解释。

Finally , experimental results are explained by quantum confinement model and luminescence center model .

证明纳米粉末和溶胶的发光中心明显不同于体材料的发光中心。

It is shown that the luminescent sites of the ZnS : Mn nanocrystalline powder and sol are different from that of the bulk .

参考扩展量子限制-发光中心模型，提出了一种激发模型来解释我们样品中的激发能量跃迁。

Referring to the extended quantum confinement-luminescence center model , a excitation model was proposed to explain the excited energy transfer within our samples .

该探针由铽的荧光发光中心以及两个单功能铂基团组成，其中多功能的多齿配体作为桥联基团。

The probe consists of a luminescent terbium ( III ) center and two monofunctional platinum (ⅱ) moieties with a multifunctional polydentate ligand as the linker .

讨论了纳米晶中元激发在发光中心，导带和表面碎灭中心之间的分配关系，探讨了掺杂纳米材料成为高效发光材料的必要条件。

They are surface states quenching center and bulk quenching center , the necessary conditions that doped nanocrystals become high efficiency luminescence material have been discussed .

半导体量子点可利用量子尺寸效应，具有可调节红外宽带发光中心波长等特点。

Due to the quantum size effect , semiconductor quantum dot nanocrystals can be used to adjust the wavelength of the luminescence center for broadband infrared emission .

结果表明，Eu2+在这两种基质中均存在2个发光中心，其衰减速度不一样，蓝发光中心寿命要远大于绿发光中心寿命。

The results showed that two Eu ~ ( 2 + ) ions emitting centers are in the above two hosts and their decay speeds are different .

同时利用Ce3+和Eu2+在基质材料中形成的不同发光中心以及它们之间的能量传递，得到了一系列发光颜色不同的荧光粉。

A series of different color phosphors is achieved by doping Ce3 + and Eu2 + in the host and the energy transferring from Ce3 + to Eu2 + .