mbe

He was made an MBE in 1995 .

他于1995年获得英帝国勋位。

He has been made an MBE in the New Year Honours list .

他被列入新年受勋者名册，获授英帝国勋章。

The public will be able to nominate candidates for awards such as the MBE .

公众将可以推荐诸如英帝国勋章之类的奖项的候选人。

He had to go to Buckingham Palace to accept an MBE from the Queen .

他必须前往白金汉宫去接受女王授予的“大英帝国勋章”。

Investigation of MBE Growth and Properties of High Quality Quantum Wells

优质量子阱的MBE生长和性能研究

An Improvement in MBE Speech Model Analysis Algorithm Using B-spline Wavelet Transform

基于B-样条子波变换的MBE语音模型分析算法改进

Improved on Pitch Period Calculation Based on MBE Model

基于MBE模型的基音周期估计算法改进

Research for Improving MBE Coding Algorithm Based on DSP

基于DSP改进的MBE语音算法的研究

A New Speech Synthesis Algorithm Based on MBE

基于MBE算法的一种新的语音合成方法

MBE Growth of High Quality P Type GaAs Films

分子束外延高性能P型GaAs单晶薄膜

Study on Computer Controlled MBE AlGaAs / GaAs Growth System

计算机自动控制MBEAlGaAs/GaAs生长系统研究

Development and application of MBE technique

分子束外延技术的发展和应用

MBE Growth of High Quality GaAs / AlGaAs Quantum Well Lasers

MBE生长高质量GaAs／AlGaAs量子阱激光器

Improved MBE fundamental pitch calculation based on wavelet transform

基于小波变换的MBE模型基音估计算法改进

A method for controlling beam intensity in MBE system by a nude gauge

MBE装置中分子束流的裸规控制法

Spectral amplitude correlation algorithm between successive frames based on MBE

基于MBE的帧间谱幅度相关算法

This paper is to introduce an algorithm of low bit rate speech coding – MBE .

本文介绍了一种多带激励语音低速率编码算法。

Study of Transient Surface Phase Transition on GaAs ( 100 ) During MBE Growing

GaAs（100）同质外延表面相变的动态过程研究

Study on MBE Growth and Physics of Antimonide Laser and Detector Materials

锑化物激光器、探测器MBE生长与物理研究

High power array semiconductor laser grown by MBE

MBE生长高功率列阵激光器的研究

The recent research development of Si / HgCdTe by MBE was reported .

文章报道了Si基碲镉汞分子束外延（MBE）的最新研究进展。

The algorithm for pitch period search with MBE model is complex in calculation and low flexible .

MBE模型的基音周期搜索算法存在着运算量大，抗噪性能一般等缺点。

Study on 940 nm Semiconductor Laser Grown by MBE

MBE生长940nm半导体激光器研究

A dynamical growth model of MBE ( Molecular Beam Epitaxy ) is discussed .

讨论了分子束外延的动力学生长模型。并以高能电子衍射的表面鉴定方法，为这一模型提供了证据。

Acquisition system of RHEED intensity oscillations and its application during the MBE growth

分子束外延反射式高能电子衍射的强度振荡采集系统及其应用

Influences of vacuum pressure on activation results of MBE GaAs photocathodes

真空度对MBEGaAs光阴极激活结果的影响

High power semiconductor laser stack arrays , grown by MBE have been prepared .

报道了采用MBE外延生长方法制备的叠层阵列CW工作型高功率半导体激光器。

An SiGe Low Noise Amplifier Based on MBE Differential Epitaxy

一种基于MBE差分外延技术的SiGe低噪声放大器

MBE Growth and Lateral Carrier Confinement Characterization of Triangular Shaped Dot Like Structure

三角形点结构的MBE生长及其量子阱限制能量的横向变化

Process and character of InSb grown by MBE without GA as buffer

无GaAs缓冲层MBE生长InSb材料的工艺及其特性