lock-on

The theoretical analysis of the lock-on effect in photoconductive semiconductor switches

光电开关锁定机理的理论分析

In recent years , one of the underlying features in our game has been Lock-On Defense .

近年来，在基本功能之一，在我们的比赛已锁定防守。

Study into the Method of Measurement of Agile Radar Local Oscillation lock-on precision

捷变频雷达本振跟踪精度测试方法研究

Instead , you must use the lock-on attack to reach these zones .

反而，你必须使用有关攻击锁到达这些地带。

Analysis of Lock-On and Time Delay in High-Voltage GaAs PCSS ′ s

高压GaAs光导开关的锁定及延迟效应机理分析

Lock-on procedures and radar scope presentations vary with the level of difficulty selected .

目标锁定以及雷达显示屏的显示会由于难度的选择不同而各异。

Although the trigger condition is greater than the threshold of the lock-on effect , the high gain mode is not observed .

虽然触发条件超过锁定阈值条件，但未观察到锁定现象。

Ultrafast rising of output electric impulse of lock-on model of semi-insulated GaAs photoconductive switches

半绝缘GaAs光电导开关非线性电脉冲超快上升特性研究

Defensive sliding was a problem in last year 's game in part because of Lock-On D and issues with the movement model itself .

防守滑动是在去年的比赛的问题，因为锁进行部分D和与该运动模型本身的问题。

Though this cuts down on the laser speed camera 's effective range , the camera is still effective due to its short lock-on time .

尽管这减少了激光测速相机有效范围，相机的功能仍然是行之有效的由于其锁定时间短。

When the triggering light goes , the avalanche impact ionization and recombination radiation in the domain result in the formation of the carriers ' conductive channel in the body of the devices and control the current of the Lock-on switching .

当触发光脉冲消失后，单极电荷畴内雪崩电离和辐射复合在开关体内形成了载流子高导电通道，成为了载流子倍增的源泉，控制着Lock-on电流。

The memory mode of switching angles in the memorize is determined according to the request of VVVF ( variable voltage variable frequency ) and the variable voltage is made synchronous with the variable frequency by lock-on circuit for avoiding the appearance of voltage pinnacle in output waveform .

根据变压变频的要求确定存储器中开关角的存储方式，通过锁存电路使变压与变频同步，以避免输出波形中电压尖峰的产生。

The electronic pulse waveform of linear , non-linear and the critically transiting switching modes outputted from the SI-GaAs PCSS 's was observed and measured . Especially , we repeatedly measured the bias field thresholds and Lock-on field of the critical transiting mode from the linear to non-linear state .

作者测试了半绝缘GaAs光电导开关在线性、非线性以及从线性到非线性过渡的临界状态模式下输出的电脉冲波形，特别是反复测量了开关在临界状态下的偏置电场阈值和Lock-on电场强度。