kgd
- 网络加里宁格勒
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This paper has discussed present situation of abroad KGD technology .
本文论述了国外KGD技术发展现状,以及国内发展KGD技术面临的机遇与挑战。
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In knowledge sharing KGD , the obstacles of knowledge sharing are analyzed .
在知识共享部分,分析了知识共享的主观障碍和客观障碍。
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Development and Challenge of KGD Technology
KGD技术发展与挑战
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Quality and Reliability Assurance Technology of KGD
KGD质量和可靠性保障技术
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Output Properties of External Resonator KGd ( WO_4 ) _2 Raman Laser
外腔式KGd(WO4)2Raman激光器的输出特性研究
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Structure and Vibration Spectrum of Laser Crystal Yb : KGd ( WO_4 ) _2
Yb:KGd(WO4)2激光晶体结构与振动光谱
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KGD Technology and Applications
确好芯片KGD及其应用
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KGd ( WO_4 ) _2 laser crystal is a new laser substance material develop upon CaWO_4 crystal .
钨酸钾钆(KGd(WO4)2,简称KGW)激光晶体是在钨酸钙(CaWO4)晶体上发展起来的一种新型激光材料。
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KGD technology is faced with the challenge and good fortune in china . The major technical requirements of KGD have been discussed .
论述了已知良好芯片(KGD)保证的主要技术要求,重点介绍了KGD夹具技术和工艺流程,为国内KGD技术的发展提供了技术指导。
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Raman Spectrum of Nd-doped and Yb-doped KGd ( WO_4 ) _2 Crystal
掺钕、镱两种激活离子KGW晶体的喇曼光谱
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Modified CZ . Growth and the Properties of Nd ~ ( 3 + ): KGd ( WO_4 ) _2 Crystal
熔盐提拉法生长的Nd~(3+):KGd(WO4)2单晶的性能研究
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The Up-conversion of Frequency in Yb ~ ( 3 + ): KGd ( WO_4 ) _2 Material
Yb~(3+):KGd(WO4)2材料的频率上转换发光
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The power bare die has the characteristics of large current and high temperature , so the KGD technology of general bare die cannot be used in the power bare die .
由于功率裸芯片具有大电流、耐高压、发热大等特点,一般裸芯片的KGD技术不能直接运用于功率裸芯片。
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Growth of Nd ~ ( 3 + ) and Yb ~ ( 3 + ) Doped KGd ( WO_4 ) _2 Crystals
Nd~(3+)和Yb~(3+)掺杂的KGd(WO4)2单晶生长
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A new analytical model for pressure decline under the condition of forced fracture closure was developed on the basis of material balance theory and the former corresponding fracture models , such as PKN and KGD models .
以物质平衡原理和相关分析模型为基础,对PKN和KGD两种裂缝模型建立了裂缝强制闭合条件下的压力降落解释模型。
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The operation of a flashlamp pumped the neodymium doped potassium gadolinium tungstate ( Nk ∶ KGd ( WO 4 ) 2 ) laser is reported in this paper .
报道了用闪光灯泵浦的掺钕的钨酸钆镓(Nd3+:KGd(WO4)2)激光器。
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Because disintegrins can inhibit the binding of ECM to integrins according to the RGD or KGD sequence , their signaling pathways are close related with integrins ' pathways .
因为去整合素这一蛇毒蛋白家族可凭借其RGD分子序列而抑制ECM与细胞整合素(integrins)间的结合,所以它所涉及的信号转导通路与整合素密切相关。
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A good number of crystals have been found to be Raman-active , such as Ba ( NO_3 ) _2 , BaWO_4 , KGd ( WO_4 ) _2 and YVO_4 crystals .
近年来,多种人工生长的晶体被发现是优良的拉曼介质,例如Ba(NO3)2、BaWO4、KGd(WO4)2和YVO4晶体等。