For the analytical calculation of MOS capacitor in high frequency case , the second assumption is proposed : At j ≤ j_ ( min ), the density of minority carriers is given by Boltzmann statistics .
对于高频时MOS结构电容的理论计算，提出了第二个假设，在φ≤φ（min）区间，少数载流子浓度遵从玻尔兹曼统计分布。
j min