接触电阻

jiē chù diàn zǔ
  • contact resistance
接触电阻接触电阻
  1. 并给出了合金化温度对比接触电阻(ρc)的影响。

    The effect of alloy temperature on the specific contact resistance ( Pc ) was studied .

  2. 基于BP神经网络的接触电阻测量与分等定级

    Measurement and grading of contact resistance based on BP neural network

  3. ρ(c1)是合金与其下在合金化后形成的高掺杂层间的比接触电阻。

    ρ C_1 occurs between the contact metal and its underlying highly doped semiconductor layer ( NDc ) after alloying .

  4. GaN蓝光LED电极接触电阻的优化

    Optimization of Contact Resistance of GaN Blue LED Electrodes

  5. 结果表明800℃退火比接触电阻的增加是由于接触界面处C堆积造成的。

    The results indicated that the increase of specific contact resistivity after annealing at 800 ℃ was due to C stacking at contact interface .

  6. 基于Delphi接触电阻测试系统控制程序的设计

    Control Program Design of the Contact Resistance Test System Based on Delphi

  7. 而且Pd是聚合物生成的催化剂,使得在微动过程中接触电阻升高。

    Pd can catalyze the generation of fretting polymers , which results in the rising of resistance .

  8. 镀C材料的微动接触电阻值远高于镀金材料的电阻值,低接触压力下镀C材料的微动接触电阻不稳定。

    Contact resistance of carbon-plated material is much higher than that of gold plated materials . Low contact force will result in unstable resistance of C-plated material .

  9. 接触电阻对聚合物PTC元件性能的影响

    The Effect of Contact Resistance of Polymer PTC Element on Electrical Property

  10. 浅论表面接触电阻对CVTtgδ测量产生的影响

    Discussing the Influence of Facial Contact Resistance on the Measurement of CVT tg δ

  11. 结合接触电阻测试结果与光学显微镜、扫描电子显微镜和X射线能谱仪等表面微观探测设备的测试结果进行失效机理分析。

    The failure mechanism was analyzed by contact resistance and surface detection equipment such as optical microscope , scanning electron microscopy and X-ray energy spectrometer .

  12. Ag偏聚在晶界上使晶粒间变得明显清晰;AES分析指出Ag偏聚在表面上,降低了YBCO-金属导线的接触电阻。

    AES analysis indicated that Ag segregated on surface of YBCO and resulted in decrease of YBCO-metal lead resistance .

  13. 结果表明:由含磷试剂所配制的N型掺杂银浆所制的电池片的转换效率可达14.5%,接触电阻约为0.002Ω。

    The results show that the inversion efficiency of the solar cell gets to 14.5 % and the contact resistance is only about 0.002 Ω by means of phosphoric agent .

  14. 本文通过使用不同磷化物为配制N型掺杂银浆的添加剂,考察了N型掺杂银浆中的含磷浓度对所制电池片的转换效率和接触电阻的影响。

    Research on N Type Silver Paste Contented Phosphoric Agent The influence of phosphorated concentration of phosphorated silver paste on the inversion efficiency and contact resistance of solar cell were investigated .

  15. 结果表明,含NO.2玻璃料的烧渗铝电极试样显现出低的接触电阻和良好的抗老化特性。

    The results show that the fritted-Al electrode containing NO.2frit exhibits low contact resistance and good long term behavior .

  16. 采用破坏性拉力试验和焊点接触电阻测量两种方法测试Pt-Pd-Ag三元合金导体的粗Al丝超声键合的性能。

    The performances of ultrasonic bounding between thick Al and Pt Pd Ag conductors are analyzed by measuring the tensile strength and the weld contact resistance .

  17. 提出了利用及消除极化电场的方法,为GaN基LED工艺优化提供理论基础,并通过实验降低p型GaN欧姆接触电阻,提高LED的内量子效率。

    Both utilization and elimination of the polarization field are proposed . Experimentally , specific contact resistance to p-GaN is reduced and internal quantum efficiency of LED is improved .

  18. 通过测量Ag膜与YBCO膜的接触电阻,研究了离子束轰击后YBCO膜表面的状况。

    The surface of YBCO film after ion beam milling was studied by measuring the contact resistance between Ag and YBCO film .

  19. MgB2超导线和不同电极材料之间接触电阻的研究

    Study on contact resistance between mgb_2wire and electrodes of different materials

  20. 用InGaN/AlGaN超晶格降低p-GaN欧姆接触电阻

    Reduce Ohmic Contact Resistance to p-GaN Using InGaN / AlGaN Superlattice

  21. 但是,由于较低的耐蚀性与较高的接触电阻,使得PEMFC还不能大规模的商业生产。

    However , because of lower corrosion resistance and higher contact resistance , makes PEMFC cannot be commercial production on a large scale .

  22. 低p-GaN欧姆接触电阻的研究

    The Research of Low Ohmic Contact Resistance to p-GaN

  23. 一种十分有效的电位器接触电阻变化率(CRV)的测量方法

    A Method Effective for Potentiometers ' Contact Resistance Variation ( CRV ) Test

  24. 结果表明,Ag/REO接触电阻最低、材料转移最少。对其15万次分断后的接触表面进行的SEM分析表明,Ag/REO触点表面平坦,结合紧密,没有裂纹和孔洞产生。

    The results indicated that the Ag / REO contact has the best integrative performance with the lowest contact resistance and metal transfer and keeps the best surface state with smooth plane and without cracks and pores .

  25. 纳米复合镀层的接触电阻与纯金镀层相差不大,纳米SiC粒子的加入对镀层的电性能影响较小。

    The difference in contact resistance of composite coating and pure gold coating was not obvious , which showed that the nano-SiC added in the coating has a little effect on the electrical properties of it .

  26. 还原烧成过程中,陶瓷的室温电阻率降低,PTC效应消失;烧成温度越高,陶瓷颗粒之间的接触电阻越小。

    In reducing phase , the room-temperature resistivity of ceramic matrix is lowered and the PTC effect is diminished , and the contact-resistance of composites decreases with the increasing sintering temperature .

  27. 镀层中Pd的含量对镀层的接触电阻有较大的影响,随着镀层中Pd的含量提高,镀层的接触电阻明显减小,接触性能得到提高。

    The content of Palladium in the coating had a great influence on the contact resistance of the coating . With the growth of content of Palladium in the coating , the contact resistance of the coating decreased .

  28. 用探针台测得不同合金工艺条件下的接触电阻值,建立传输线(TLM)模型,计算了欧姆接触的比接触电阻。选出了450℃,90s的最佳合金条件。

    A transmission line model ( TLM ) was presented to calculate the contact resistivity and the optimum alloying condition of 450 ℃, 90s was chosen .

  29. 首先,为提高EIT正问题的计算精度,采用了计及电极实际尺寸和接触电阻的全电极边界条件模型,并提出用疏、密剖分模型分别作为EIT逆问题和正问题计算模型;

    First , the electrode model of EIT in the forward problem is dealed with complete electrode model , which considered the size and the contact resistance of real electrode .

  30. 400℃10min退火后,比接触电阻比退火前降低了约两个数量级。

    The specific contact resistance is dropped in two orders of magnitude when the contact was annealed at 400 ℃ for 10 min.