外量子效率

结合器件外量子效率谱的测试结果，我们发现较薄的吸收层厚度会导致器件对入射光的吸收不充分，进而影响了器件短路电流和光谱响应。

Combined with the EQE spectrum , we proposed that the absorption layer was not thick enough to absorp all the incident lights , which could affect the Jsc and spectral response of the devices .

提高发光二极管（LED）外量子效率的途径

Enhancement of the External Quantum Efficiency of Light-emitting-diodes

最后得出：高质量，合理的掺杂浓度，一定厚度的GaP材料是提高外量子效率的关键。

And the key to improve external efficiency was qualified GaP layer with reasonable doping and thickness .

针对目前LED外量子效率不高的现状，本论文提出从外延工艺和芯片制程两个方面采用新型GaN基LED结构，来改善这一缺陷，并得到较好的结果。

External quantum efficiency is low in the current situation , and this paper presents two aspects to improve this defect : the epitaxial process and chip process using the new GaN-based LED structure , and gets better results .

文章首先介绍了发光二极管（LED）的内量子效率、外量子效率的基本概念和提高量子效率的基本方法，接着对LED外延的结构和方法做了简要介绍。

The concept of internal and external quantum efficiency of light emitting diodes ( LEDs ) and the basic ways to improve this are first introduced . The epitaxial structure and growth of LED wafers are then briefly described , with emphasis on the techniques to enhance the quantum efficiency .

在330nm处，器件获得最高的光电响应度为0.2A/W，相对应的外量子效率为75.2%。成像测试显示该器件具有良好的紫外成像特性。

The highest responsivity of 0.2 A / W was obtained at wavelength of 330 nm , corresponding to an external quantum efficiency of 75.2 % .

20～40℃时特征温度T0高达67K，室温下外量子效率为0.3mW／mA。

The characteristic temperatures up to 67K were observed for the devices under a temperature between 20 ￣ 40 ℃, the single facet slope efficiency is 0.3 mW / mA at room temperature .

实验结果表明，这种对接生长方案，可以获得光滑的对接界面，显著提高了激光器和调制器之间的耦合效率（从常规的17%提高到78%）及EML器件的外量子效率（从003mW/mA提高到015mW/mA）。

The results show that the new butt joint approach can obtain smoother butt joint interface and greatly improve the coupling efficiency and slope quantum efficiency of EML chips from 17 % to 78 % and from 0 03mW / mA to 0 15mW / mA , respectively .

器件的启亮电压为3.2V。最高的流明效率和功率效率分别达到69cd/aand62lm/W，对应于12%的最大功率转换效率和17%的外量子效率。

The device turn-on voltage is 3.2 V. The maximum luminance efficiency and maximum luminous power efficiency reach 69 cd / A and 62 lm / W , respectively , corresponding to an external quantum efficiency of 17 % .

有机磷光电致发光器件中的复合宽度和外量子效率

Recombination Width and External Quantum Efficiency in Organic Electro-Phosphorescent Devices

量子阱激光器的阈值电流和外量子效率

Threshold current and external quantum efficiency of quantum well lasers

高亮度发光二极管外量子效率的计算

Calculating External Quantum Efficiency of High Bright Light Emitting Diodes

单层有机发光二极管中复合区域和外量子效率的研究

Investigation of the recombination zone and external quantum efficiency in single layer OLEDs

外量子效率随复合电流密度的增大而显著降低.讨论了外加电压和器件厚度对复合宽度的影响，分析了外量子效率随外加电压、器件厚度及复合电流密度变化的原因。

The external quantum efficiency decreases significantly with increasing the recombination current density .

发光效率由内量子效率和外量子效率两部分共同决定。

LED efficiency consists of the internal quantum efficiency and light extract efficiency .

1比较了各种提高外量子效率的方法；

The ways to increase LED 's external efficiency were compared with each other .

发光二极管内量子效率高而亮度不高的原因是外量子效率低。

The reason for higher internal efficiency but lower brightness is its poor external efficiency .

对光子晶体结构的外量子效率进行了计算。

The external quantum efficiency of photon crystal ( PHC ) structured LED is calculated .

提出了布拉格反射器外量子效率模型；

A model of the effect of different DBR types on the external efficiency was proposed .

半导体激光器微分外量子效率及内量子效率的测量

The measurements of the internal quantum efficiency and the external differential quantum efficiency of semiconductor lasers

全息技术制作二维光子晶体蓝宝石衬底提高发光二极管外量子效率

Enhanced external quantum efficiency of light emitting diodes by fabricating two-dimensional photonic crystal sapphire substrate with holographic technique

因此，如何有效地提高材料的外量子效率成为现代器件设计的一个重要问题。

Therefore how to effectively extract light out of the material has become a major issue in device design .

从发光机制考虑，一般常用外量子效率和内量子效率来评价。

Under electroluminescent mechanism , external quantum efficiency and internal quantum efficiency are used to evaluate the organic electroluminescent properties .

随器件厚度的增加，复合宽度相应增加，但外量子效率在不同的电压下呈现不同的变化趋势；

With increasing the thickness of the device , the recombination width increases accordingly , and the external quantum efficiency behaves differently at different applied voltages ;

结果表明：（1）随外加电压升高，器件的复合宽度减小，外量子效率增加；

It is found that : ( 1 ) as the applied voltage increases , the recombination width of the device decreases and the external quantum efficiency increases ;

本文在论述影响硅光电二极管外量子效率诸因素的基础上，着重讨论了器件的收集效率，给出了确定器件外量子效率的一般公式和简化公式。

The several factors on which the outer quantum efficiency of the silicon photodiodes depend upon , especially the collection efficiency of the devices have been discussed . The universal formula and simplified formula for determining the quantum efficiency of the devices have also been shown .

研究了器件温度对于激光阈值电流、外微分量子效率和输出波长的影响。

The effects of device temperature on the laser threshold current , external differential quantum efficiency ( DQE ), and output wavelength are also investigated .

三有源区激光器外微分量子效率达2.2,2A驱动电流下单面未镀膜激光输出功率高达2.5W。

External differential quantum efficiency as high as 2.2 and light power output of 2.5 ? W per facet ( under 2A drive current ) are achieved from an uncoated novel laser device with three active regions .

本文从理论上分析了介质膜对半导体激光器外特性如阈值电流、外量子效率和最大输出功率等的影响。

Some theoretical analyses and experimental studies on the effect of dielectric coating on semiconductor laser performances are presented .

首先获得了有机紫外电致发光器件，①实现了高外量子效率的有机UV电致发光。

We obtained UV organic light emitting devices that having high external quantum efficiency .