化学汽相淀积

InP上等离子增强化学汽相淀积SiO2膜及其MIS结构C-V特性研究

Plasma-Enhanced CVD SiO_2 Films on InP and Study of C-V Charateristics in InP-MIS Structures

低压化学汽相淀积含氢氮化硼薄膜

Low Pressure Chemical Vapor Deposition of Boro-Hydro-Nitride Films

GaAs化学汽相淀积的热力学分析&Ga/AsCl3/H2/IG系统

Thermodynamic Analysis for GaAs CVD : Ga / AsCl_3 / H_2 / IG System

InSb上化学汽相淀积SiO2界面形成的X射线光电子谱研究

XPS study of interface formation of CVD SiO_2 on InSb

等离子增强化学汽相淀积a-SiC：H簿膜的AES研究

AES Study of a-SiC : H Thin Films Formed by Plasma-Enhanced Chemical Vapor Deposition

随着分子束外延（MBE）和有机金属化学汽相淀积（MOCVD）技术的发展，出现了新型的半导体超晶格量子阱长波红外探测器。

With the development of MBE and MOCVD technologies , the no-vel semiconductor superlattice multiquantum well LWIR detectors appear .

本文详细介绍了a-C∶H薄膜的各种制备方法，包括等离子体淀积法、离子束法、溅射法和化学汽相淀积法等，给出了某些典型的实验条件。

The various preparation methods of a-C : H thin films , including plasma deposition , ion beam deposition , sputtering and chemical vapor deposition , were described in detail in this paper .

GaInP2/GaAs/Ge级联电池隧道结的结构设计及金属有机化学汽相淀积生长研究

Metal organic chemical vapor deposition growth and structure design of tunnel junction of GaInP_2 / GaAs / Ge tandem solar cells

本文介绍了采用激光化学汽相淀积（LCVD）技术淀积氮化硅薄膜微透镜的系统与工艺的设计。

The design of system and technology for depositing silicon-nitride film microlenses by laser chemical vapor deposition ( LCVD ) are introduced .

化学汽相淀积反应器三相感应电压调整器

Chemical vapor deposition reactor three-phase induction voltage regulator

相控阵多晶片电子扫描化学汽相淀积多晶硅

Multicrystal phased array scanning cvd polysilicon

本文概述了激光增强氧化和激光诱导化学汽相淀积这两种新的氧化技术。

This paper presents an overview of two new oxdizing techniques for laser-enhanced oxidation ard laser-induced chemical vapor deposition .

过去几年，人造钻石生产方法，尤其是随着化学汽相淀积法的使用，成本已越发低廉。

Synthetic production methods have become more cost effective in the past couple of years , particularly using the technique of chemical vapour deposition .

绝缘衬底上以低压化学汽相淀积得到的多晶硅膜，经连续Ar~+激光再结晶后，电学性质显著改善，晶粒尺寸从原来的200～500埃增大到10μm左右。

CW Ar ~ + laser is used for recrystallization of LPCVD polysilicon films on SiO_2 isolating layers . Experimental results show a significant increase in grain size from 200 ~ 500 to about 10 μ m and improvement in electrical properties .

以甲烷和氢气的混合气体为原料，用热丝化学汽相淀积法，在（100）硅衬底上800℃温度时异质生长出适合场发射的金刚石薄膜。

Diamond films for field emission are prepared heterogeneously on ( 100 ) - oriented Si substrates in hot filament chemical vapor deposition ( HFCVD ) process , raw materials are a gas mixture of methane and hydrogen , and substrate temperature is lower than 800 ℃ .

提出了一个新的化学蒸发模型，认为氧化反应不但发生在基片上，也发生在蒸发源的表面附近。CdS薄膜制备方法有蒸发，溅射，化学汽相淀积等。

A chemical evaporation model has been proposed . CdS thin films can be prepared by such technique as evaporation , sputtering and chemical vapor deposition , etc.