伦敦穿透深度
- 网络london penetration depth
伦敦穿透深度-
为了加强本征约瑟夫逊结（简称本征结）与高频电磁波信号的耦合，我们通过平面工艺手段获得了厚度小于伦敦穿透深度的超薄单晶基底，其厚度小于150nm。
In order to increase the coupling between intrinsic Josephson junctions and high-frequency signal sources , we have successfully fabricated ultra thin single crystals , whose thicknesses are less than London penetration depth (~ 150nm ) .